Room temperature memory operation of a single InAs quantum dot layer in a GaAs/AlGaAs heterostructure

C. R. Mueller; L. Worschech; J. Heinrich; Sven Höfling; A. Forchel

doi:10.1063/1.2967880

Room temperature memory operation of a single InAs quantum dot layer in a GaAs/AlGaAs heterostructure

C. R. Mueller^*, L. Worschech, J. Heinrich, Sven Höfling, A. Forchel

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

Room temperature (RT) memory operation of a single InAs quantum dot (QD) layer serving as floating gate is demonstrated. In an in-plane gated quantum-wire transistor, the charge state of the self-assembled InAs QDs is controlled by the applied gate voltage. Due to the floating-gate function of the QDs on a nearby transport channel, threshold hysteresis exceeding 200 mV and storage times of several minutes are observed. The RT operation is attributed to an optimized positioning of the QDs at the site of a local minimum in the AlGaAs conduction band. (C) 2008 American Institute of Physics.

Original language	English
Article number	063502
Number of pages	3
Journal	Applied Physics Letters
Volume	93
Issue number	6
DOIs	https://doi.org/10.1063/1.2967880
Publication status	Published - 11 Aug 2008

Keywords

FIELD-EFFECT TRANSISTOR
CHANNEL
DEVICES

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10.1063/1.2967880

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title = "Room temperature memory operation of a single InAs quantum dot layer in a GaAs/AlGaAs heterostructure",

abstract = "Room temperature (RT) memory operation of a single InAs quantum dot (QD) layer serving as floating gate is demonstrated. In an in-plane gated quantum-wire transistor, the charge state of the self-assembled InAs QDs is controlled by the applied gate voltage. Due to the floating-gate function of the QDs on a nearby transport channel, threshold hysteresis exceeding 200 mV and storage times of several minutes are observed. The RT operation is attributed to an optimized positioning of the QDs at the site of a local minimum in the AlGaAs conduction band. (C) 2008 American Institute of Physics.",

keywords = "FIELD-EFFECT TRANSISTOR, CHANNEL, DEVICES",

author = "Mueller, {C. R.} and L. Worschech and J. Heinrich and Sven H{\"o}fling and A. Forchel",

year = "2008",

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doi = "10.1063/1.2967880",

language = "English",

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T1 - Room temperature memory operation of a single InAs quantum dot layer in a GaAs/AlGaAs heterostructure

AU - Mueller, C. R.

AU - Worschech, L.

AU - Heinrich, J.

AU - Höfling, Sven

AU - Forchel, A.

PY - 2008/8/11

Y1 - 2008/8/11

N2 - Room temperature (RT) memory operation of a single InAs quantum dot (QD) layer serving as floating gate is demonstrated. In an in-plane gated quantum-wire transistor, the charge state of the self-assembled InAs QDs is controlled by the applied gate voltage. Due to the floating-gate function of the QDs on a nearby transport channel, threshold hysteresis exceeding 200 mV and storage times of several minutes are observed. The RT operation is attributed to an optimized positioning of the QDs at the site of a local minimum in the AlGaAs conduction band. (C) 2008 American Institute of Physics.

AB - Room temperature (RT) memory operation of a single InAs quantum dot (QD) layer serving as floating gate is demonstrated. In an in-plane gated quantum-wire transistor, the charge state of the self-assembled InAs QDs is controlled by the applied gate voltage. Due to the floating-gate function of the QDs on a nearby transport channel, threshold hysteresis exceeding 200 mV and storage times of several minutes are observed. The RT operation is attributed to an optimized positioning of the QDs at the site of a local minimum in the AlGaAs conduction band. (C) 2008 American Institute of Physics.

KW - FIELD-EFFECT TRANSISTOR

KW - CHANNEL

KW - DEVICES

U2 - 10.1063/1.2967880

DO - 10.1063/1.2967880

M3 - Article

SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

M1 - 063502

ER -

Room temperature memory operation of a single InAs quantum dot layer in a GaAs/AlGaAs heterostructure

Abstract

Keywords

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