Room temperature electron spin relaxation in GaInNAs multiple quantum wells at 1.3 μm

Charis Reith; Steven John White; M. Mazilu; A. Miller; J. Konttinen; M. Guina; M. Pessa

doi:10.1063/1.2396901

Room temperature electron spin relaxation in GaInNAs multiple quantum wells at 1.3 μm

Charis Reith, Steven John White, M. Mazilu, A. Miller, J. Konttinen, M. Guina, M. Pessa

School of Physics and Astronomy

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Abstract

The authors report a direct measurement of electron spin relaxation in GaInNAs semiconductor multiple quantum wells at room temperature. Multiple quantum wells of widths 5.8, 7, and 8 nm exhibiting excitonic absorption around 1.3 mu m have been studied. Spin relaxation times were found to increase with well width in the range of 77-133 ps. The spin relaxation time dependence on first electron confinement energy suggests the Elliot-Yafet mechanism [A. Tackeuchi , Physica B 272, 318 (1999)] as the dominant relaxation process. (c) 2006 American Institute of Physics.

Original language	English
Pages (from-to)	211122
Number of pages	3
Journal	Applied Physics Letters
Volume	89
Issue number	21
DOIs	https://doi.org/10.1063/1.2396901
Publication status	Published - 20 Nov 2006

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title = "Room temperature electron spin relaxation in GaInNAs multiple quantum wells at 1.3 μm",

abstract = "The authors report a direct measurement of electron spin relaxation in GaInNAs semiconductor multiple quantum wells at room temperature. Multiple quantum wells of widths 5.8, 7, and 8 nm exhibiting excitonic absorption around 1.3 mu m have been studied. Spin relaxation times were found to increase with well width in the range of 77-133 ps. The spin relaxation time dependence on first electron confinement energy suggests the Elliot-Yafet mechanism [A. Tackeuchi , Physica B 272, 318 (1999)] as the dominant relaxation process. (c) 2006 American Institute of Physics.",

author = "Charis Reith and White, \{Steven John\} and M. Mazilu and A. Miller and J. Konttinen and M. Guina and M. Pessa",

year = "2006",

month = nov,

day = "20",

doi = "10.1063/1.2396901",

language = "English",

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pages = "211122",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Room temperature electron spin relaxation in GaInNAs multiple quantum wells at 1.3 μm

AU - Reith, Charis

AU - White, Steven John

AU - Mazilu, M.

AU - Miller, A.

AU - Konttinen, J.

AU - Guina, M.

AU - Pessa, M.

PY - 2006/11/20

Y1 - 2006/11/20

N2 - The authors report a direct measurement of electron spin relaxation in GaInNAs semiconductor multiple quantum wells at room temperature. Multiple quantum wells of widths 5.8, 7, and 8 nm exhibiting excitonic absorption around 1.3 mu m have been studied. Spin relaxation times were found to increase with well width in the range of 77-133 ps. The spin relaxation time dependence on first electron confinement energy suggests the Elliot-Yafet mechanism [A. Tackeuchi , Physica B 272, 318 (1999)] as the dominant relaxation process. (c) 2006 American Institute of Physics.

AB - The authors report a direct measurement of electron spin relaxation in GaInNAs semiconductor multiple quantum wells at room temperature. Multiple quantum wells of widths 5.8, 7, and 8 nm exhibiting excitonic absorption around 1.3 mu m have been studied. Spin relaxation times were found to increase with well width in the range of 77-133 ps. The spin relaxation time dependence on first electron confinement energy suggests the Elliot-Yafet mechanism [A. Tackeuchi , Physica B 272, 318 (1999)] as the dominant relaxation process. (c) 2006 American Institute of Physics.

UR - https://www.scopus.com/pages/publications/33845398137

U2 - 10.1063/1.2396901

DO - 10.1063/1.2396901

M3 - Article

SN - 0003-6951

VL - 89

SP - 211122

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -

Room temperature electron spin relaxation in GaInNAs multiple quantum wells at 1.3 μm

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