Abstract
The authors report a direct measurement of electron spin relaxation in GaInNAs semiconductor multiple quantum wells at room temperature. Multiple quantum wells of widths 5.8, 7, and 8 nm exhibiting excitonic absorption around 1.3 mu m have been studied. Spin relaxation times were found to increase with well width in the range of 77-133 ps. The spin relaxation time dependence on first electron confinement energy suggests the Elliot-Yafet mechanism [A. Tackeuchi , Physica B 272, 318 (1999)] as the dominant relaxation process. (c) 2006 American Institute of Physics.
Original language | English |
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Pages (from-to) | 211122 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 89 |
Issue number | 21 |
DOIs | |
Publication status | Published - 20 Nov 2006 |