Room temperature carrier kinetics in the W-type GaInAsSb/InAs/AlSb quantum well structure emitting in mid-infrared spectral range

M. Syperek; K. Ryczko; M. Dallner; M. Dyksik; M. Motyka; M. Kamp; S. Höfling; J. Misiewicz; G. Sȩk

doi:10.12693/APhysPolA.130.1224

Room temperature carrier kinetics in the W-type GaInAsSb/InAs/AlSb quantum well structure emitting in mid-infrared spectral range

M. Syperek^*, K. Ryczko, M. Dallner, M. Dyksik, M. Motyka, M. Kamp, S. Höfling, J. Misiewicz, G. Sȩk

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Room temperature carrier kinetics has been investigated in the type-II W-design AlSb/InAs/Ga_0:80In_0:20As_0:15Sb_0:85/InAs/AlSb quantum well emitting in the mid-infrared spectral range (at 2.54 μm). A timeresolved reflectance technique, employing the non-degenerated pump-probe scheme, has been used as a main experimental tool. Based on that, a primary carrier relaxation time of 2:3 ± 0:2 ps has been found, and attributed to the initial carrier cooling process within the quantum well states, while going towards the ground state via the carrier-optical phonon scattering mechanism. The decay of a quasi-equilibrium carrier population at the quantum well ground states is primarily governed by two relaxation channels: (i) radiative recombination within distribution of spatially separated electrons and holes that occurs in the nanosecond time scale, and (ii) the hole tunnelling out of its confining potential, characterized by a 240 ± 10 ps time constant.

Original language	English
Title of host publication	Acta Physica Polonica A
Subtitle of host publication	Proceedings of the 45th International School and Conference on the Physics of Semiconductors “Jaszowiec” 2016, Szczyrk, Poland, 18-24 June, 2016
Editors	Maciej Sawicki, Bartłomiej S. Witkowski
Publisher	Institute of Physics, Polish Academy of Sciences
Pages	1224-1228
Number of pages	5
Volume	130
DOIs	https://doi.org/10.12693/APhysPolA.130.1224
Publication status	Published - 1 Nov 2016
Event	45th International School and Conference on the Physics of Semiconductors “Jaszowiec” 2016, - Szczyrk, Poland Duration: 18 Jun 2016 → 24 Jun 2016 Conference number: 45 https://www.jaszowiec.edu.pl/2016/about

Conference

Conference	45th International School and Conference on the Physics of Semiconductors “Jaszowiec” 2016,
Abbreviated title	Jaszowiec
Country/Territory	Poland
City	Szczyrk
Period	18/06/16 → 24/06/16
Internet address	https://www.jaszowiec.edu.pl/2016/about

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10.12693/APhysPolA.130.1224

Hoefling_2016_APPA_CarrierKinetics_1224
© 2016, Institute of Physics, Polish Academy of Sciences. This work has been made available online in accordance with the publisher’s policies. This is the final published version of the work, which was originally published at przyrbwn.icm.edu.pl / http://doi.org/10.12693/APhysPolA.130.1224
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Syperek, M., Ryczko, K., Dallner, M., Dyksik, M., Motyka, M., Kamp, M., Höfling, S., Misiewicz, J., & Sȩk, G. (2016). Room temperature carrier kinetics in the W-type GaInAsSb/InAs/AlSb quantum well structure emitting in mid-infrared spectral range. In M. Sawicki, & B. S. Witkowski (Eds.), Acta Physica Polonica A: Proceedings of the 45th International School and Conference on the Physics of Semiconductors “Jaszowiec” 2016, Szczyrk, Poland, 18-24 June, 2016 (Vol. 130, pp. 1224-1228). Institute of Physics, Polish Academy of Sciences. https://doi.org/10.12693/APhysPolA.130.1224

Syperek, M. ; Ryczko, K. ; Dallner, M. et al. / Room temperature carrier kinetics in the W-type GaInAsSb/InAs/AlSb quantum well structure emitting in mid-infrared spectral range. Acta Physica Polonica A: Proceedings of the 45th International School and Conference on the Physics of Semiconductors “Jaszowiec” 2016, Szczyrk, Poland, 18-24 June, 2016. editor / Maciej Sawicki ; Bartłomiej S. Witkowski. Vol. 130 Institute of Physics, Polish Academy of Sciences, 2016. pp. 1224-1228

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title = "Room temperature carrier kinetics in the W-type GaInAsSb/InAs/AlSb quantum well structure emitting in mid-infrared spectral range",

abstract = "Room temperature carrier kinetics has been investigated in the type-II W-design AlSb/InAs/Ga0:80In0:20As0:15Sb0:85/InAs/AlSb quantum well emitting in the mid-infrared spectral range (at 2.54 μm). A timeresolved reflectance technique, employing the non-degenerated pump-probe scheme, has been used as a main experimental tool. Based on that, a primary carrier relaxation time of 2:3 ± 0:2 ps has been found, and attributed to the initial carrier cooling process within the quantum well states, while going towards the ground state via the carrier-optical phonon scattering mechanism. The decay of a quasi-equilibrium carrier population at the quantum well ground states is primarily governed by two relaxation channels: (i) radiative recombination within distribution of spatially separated electrons and holes that occurs in the nanosecond time scale, and (ii) the hole tunnelling out of its confining potential, characterized by a 240 ± 10 ps time constant.",

author = "M. Syperek and K. Ryczko and M. Dallner and M. Dyksik and M. Motyka and M. Kamp and S. H{\"o}fling and J. Misiewicz and G. Sȩk",

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doi = "10.12693/APhysPolA.130.1224",

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note = "45th International School and Conference on the Physics of Semiconductors “Jaszowiec” 2016,, Jaszowiec ; Conference date: 18-06-2016 Through 24-06-2016",

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Syperek, M, Ryczko, K, Dallner, M, Dyksik, M, Motyka, M, Kamp, M, Höfling, S, Misiewicz, J & Sȩk, G 2016, Room temperature carrier kinetics in the W-type GaInAsSb/InAs/AlSb quantum well structure emitting in mid-infrared spectral range. in M Sawicki & BS Witkowski (eds), Acta Physica Polonica A: Proceedings of the 45th International School and Conference on the Physics of Semiconductors “Jaszowiec” 2016, Szczyrk, Poland, 18-24 June, 2016. vol. 130, Institute of Physics, Polish Academy of Sciences, pp. 1224-1228, 45th International School and Conference on the Physics of Semiconductors “Jaszowiec” 2016, Szczyrk, Poland, 18/06/16. https://doi.org/10.12693/APhysPolA.130.1224

Room temperature carrier kinetics in the W-type GaInAsSb/InAs/AlSb quantum well structure emitting in mid-infrared spectral range. / Syperek, M.; Ryczko, K.; Dallner, M. et al.
Acta Physica Polonica A: Proceedings of the 45th International School and Conference on the Physics of Semiconductors “Jaszowiec” 2016, Szczyrk, Poland, 18-24 June, 2016. ed. / Maciej Sawicki; Bartłomiej S. Witkowski. Vol. 130 Institute of Physics, Polish Academy of Sciences, 2016. p. 1224-1228.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Room temperature carrier kinetics in the W-type GaInAsSb/InAs/AlSb quantum well structure emitting in mid-infrared spectral range

AU - Syperek, M.

AU - Ryczko, K.

AU - Dallner, M.

AU - Dyksik, M.

AU - Motyka, M.

AU - Kamp, M.

AU - Höfling, S.

AU - Misiewicz, J.

AU - Sȩk, G.

N1 - Conference code: 45

PY - 2016/11/1

Y1 - 2016/11/1

N2 - Room temperature carrier kinetics has been investigated in the type-II W-design AlSb/InAs/Ga0:80In0:20As0:15Sb0:85/InAs/AlSb quantum well emitting in the mid-infrared spectral range (at 2.54 μm). A timeresolved reflectance technique, employing the non-degenerated pump-probe scheme, has been used as a main experimental tool. Based on that, a primary carrier relaxation time of 2:3 ± 0:2 ps has been found, and attributed to the initial carrier cooling process within the quantum well states, while going towards the ground state via the carrier-optical phonon scattering mechanism. The decay of a quasi-equilibrium carrier population at the quantum well ground states is primarily governed by two relaxation channels: (i) radiative recombination within distribution of spatially separated electrons and holes that occurs in the nanosecond time scale, and (ii) the hole tunnelling out of its confining potential, characterized by a 240 ± 10 ps time constant.

AB - Room temperature carrier kinetics has been investigated in the type-II W-design AlSb/InAs/Ga0:80In0:20As0:15Sb0:85/InAs/AlSb quantum well emitting in the mid-infrared spectral range (at 2.54 μm). A timeresolved reflectance technique, employing the non-degenerated pump-probe scheme, has been used as a main experimental tool. Based on that, a primary carrier relaxation time of 2:3 ± 0:2 ps has been found, and attributed to the initial carrier cooling process within the quantum well states, while going towards the ground state via the carrier-optical phonon scattering mechanism. The decay of a quasi-equilibrium carrier population at the quantum well ground states is primarily governed by two relaxation channels: (i) radiative recombination within distribution of spatially separated electrons and holes that occurs in the nanosecond time scale, and (ii) the hole tunnelling out of its confining potential, characterized by a 240 ± 10 ps time constant.

U2 - 10.12693/APhysPolA.130.1224

DO - 10.12693/APhysPolA.130.1224

M3 - Conference contribution

AN - SCOPUS:84999040116

VL - 130

SP - 1224

EP - 1228

BT - Acta Physica Polonica A

A2 - Sawicki, Maciej

A2 - Witkowski, Bartłomiej S.

PB - Institute of Physics, Polish Academy of Sciences

T2 - 45th International School and Conference on the Physics of Semiconductors “Jaszowiec” 2016,

Y2 - 18 June 2016 through 24 June 2016

ER -

Syperek M, Ryczko K, Dallner M, Dyksik M, Motyka M, Kamp M et al. Room temperature carrier kinetics in the W-type GaInAsSb/InAs/AlSb quantum well structure emitting in mid-infrared spectral range. In Sawicki M, Witkowski BS, editors, Acta Physica Polonica A: Proceedings of the 45th International School and Conference on the Physics of Semiconductors “Jaszowiec” 2016, Szczyrk, Poland, 18-24 June, 2016. Vol. 130. Institute of Physics, Polish Academy of Sciences. 2016. p. 1224-1228 doi: 10.12693/APhysPolA.130.1224

Room temperature carrier kinetics in the W-type GaInAsSb/InAs/AlSb quantum well structure emitting in mid-infrared spectral range

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