Reprocessing of thermally oxidised aluminium arsenide (AlAs) in epitaxial multilayers without delamination

L Hobbs; I Eddie; G Erwin; AC Bryce; RM De La Rue; JS Roberts; Thomas Fraser Krauss; DW McComb; M MacKenzie

Reprocessing of thermally oxidised aluminium arsenide (AlAs) in epitaxial multilayers without delamination

L Hobbs, I Eddie, G Erwin, AC Bryce, RM De La Rue, JS Roberts, Thomas Fraser Krauss, DW McComb, M MacKenzie

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Annealing or processing of AlAs that has been subjected to a wet thermal oxidation process can result in severe delamination of material at the oxidation front. This paper reports a procedure for preventing this delamination and presents a possible cause for the delamination.

Original language	English
Pages (from-to)	232-239
Number of pages	8
Journal	Journal of Electronic Materials
Volume	34
Publication status	Published - Mar 2005

Keywords

AlAs
thermal oxidation
delamination
VERTICAL-CAVITY LASERS
WET OXIDATION
MICROSTRUCTURE
ALGAAS
ALXGA1-XAS
ALLOYS

Cite this

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title = "Reprocessing of thermally oxidised aluminium arsenide (AlAs) in epitaxial multilayers without delamination",

abstract = "Annealing or processing of AlAs that has been subjected to a wet thermal oxidation process can result in severe delamination of material at the oxidation front. This paper reports a procedure for preventing this delamination and presents a possible cause for the delamination.",

keywords = "AlAs, thermal oxidation, delamination, VERTICAL-CAVITY LASERS, WET OXIDATION, MICROSTRUCTURE, ALGAAS, ALXGA1-XAS, ALLOYS",

author = "L Hobbs and I Eddie and G Erwin and AC Bryce and {De La Rue}, RM and JS Roberts and Krauss, {Thomas Fraser} and DW McComb and M MacKenzie",

year = "2005",

month = mar,

language = "English",

volume = "34",

pages = "232--239",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer",

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TY - JOUR

T1 - Reprocessing of thermally oxidised aluminium arsenide (AlAs) in epitaxial multilayers without delamination

AU - Hobbs, L

AU - Eddie, I

AU - Erwin, G

AU - Bryce, AC

AU - De La Rue, RM

AU - Roberts, JS

AU - Krauss, Thomas Fraser

AU - McComb, DW

AU - MacKenzie, M

PY - 2005/3

Y1 - 2005/3

N2 - Annealing or processing of AlAs that has been subjected to a wet thermal oxidation process can result in severe delamination of material at the oxidation front. This paper reports a procedure for preventing this delamination and presents a possible cause for the delamination.

AB - Annealing or processing of AlAs that has been subjected to a wet thermal oxidation process can result in severe delamination of material at the oxidation front. This paper reports a procedure for preventing this delamination and presents a possible cause for the delamination.

KW - AlAs

KW - thermal oxidation

KW - delamination

KW - VERTICAL-CAVITY LASERS

KW - WET OXIDATION

KW - MICROSTRUCTURE

KW - ALGAAS

KW - ALXGA1-XAS

KW - ALLOYS

UR - http://www.scopus.com/inward/record.url?scp=17144430932&partnerID=8YFLogxK

M3 - Article

SN - 0361-5235

VL - 34

SP - 232

EP - 239

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

ER -

Reprocessing of thermally oxidised aluminium arsenide (AlAs) in epitaxial multilayers without delamination

Abstract

Keywords

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