Reduced surface sidewall recombination and diffusion in quantum-dot lasers

Stephen A. Moore, Liam O'Faolain, Maria Ana Cataluna, Michael B. Flynn, Maria V. Kotlyar, Thomas F. Krauss

Research output: Contribution to journalArticlepeer-review

46 Citations (Scopus)


We examine the surface recombination rate in quantum-dot semiconductor lasers and determine the diffusion length (1.0 mu m) and, for the first time, provide a value for surface recombination velocity (5 X 10(4) cm/s) in quantum-dot material. As a result of strong carrier confinement in the dots, these values are much lower than in comparable quantum-well lasers (5 X 10(5) cm/s and 5 mu m, respectively) allowing the creation of narrow (2-3 mu m wide) lasers with comparable threshold currents to those of broad area devices.

Original languageEnglish
Pages (from-to)1861-1863
Number of pages3
JournalIEEE Photonics Technology Letters
Publication statusPublished - Sept 2006


  • diffusion length
  • low threshold
  • quantum-dot lasers
  • surface recombination
  • GAIN


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