Abstract
We examine the surface recombination rate in quantum-dot semiconductor lasers and determine the diffusion length (1.0 mu m) and, for the first time, provide a value for surface recombination velocity (5 X 10(4) cm/s) in quantum-dot material. As a result of strong carrier confinement in the dots, these values are much lower than in comparable quantum-well lasers (5 X 10(5) cm/s and 5 mu m, respectively) allowing the creation of narrow (2-3 mu m wide) lasers with comparable threshold currents to those of broad area devices.
Original language | English |
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Pages (from-to) | 1861-1863 |
Number of pages | 3 |
Journal | IEEE Photonics Technology Letters |
Volume | 18 |
DOIs | |
Publication status | Published - Sept 2006 |
Keywords
- diffusion length
- low threshold
- quantum-dot lasers
- surface recombination
- GAIN