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Dive into the research topics of 'Reactive ion etch-induced effects on 0.2 μm T-gate In0.52Al0.48As/In0.53Ga0.47As/InP high electron mobility transistors'. Together they form a unique fingerprint.- Sort by
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R. Cheung*, W. Patrick, I. Pfund, G. Hähner
Research output: Contribution to journal › Article › peer-review