Quenching of metal sticking by photo-oxidation of an amorphous semiconductor: Zn on GeS2

J. Hugh Horton*, Christopher Hardacre, Christopher J. Baddeley, Geoffrey D. Moggridge, R. Mark Ormerod, Richard M. Lambert

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

The sticking probability of Zn on amorphous GeS2 is greatly reduced when the UHV-prepared semiconductor film is photo-oxidized in the presence of band-gap radiation. The phenomena underlying this interesting effect have been elucidated in a kinetic and structural study using electron spectroscopy and x-ray-absorption spectroscopy. Selective photo-oxidation of Ge sites strongly suppresses the formation of Ge-Zn bonds at the interface: these act as nucleation sites for the growing metal film. A consistent picture emerges that also accounts for the very different behavior encountered during deposition of Ag films with and without photo-oxidation in the closely related Ag/GeS2 system.

Original languageEnglish
Pages (from-to)2054-2062
Number of pages9
JournalPhysical Review B
Volume52
Issue number3
DOIs
Publication statusPublished - 1 Jan 1995

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