Quenching of metal sticking by photo-oxidation of an amorphous semiconductor: Zn on GeS2

J. Hugh Horton; Christopher Hardacre; Christopher J. Baddeley; Geoffrey D. Moggridge; R. Mark Ormerod; Richard M. Lambert

doi:10.1103/PhysRevB.52.2054

Quenching of metal sticking by photo-oxidation of an amorphous semiconductor: Zn on GeS2

J. Hugh Horton^*, Christopher Hardacre, Christopher J. Baddeley, Geoffrey D. Moggridge, R. Mark Ormerod, Richard M. Lambert

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

The sticking probability of Zn on amorphous GeS2 is greatly reduced when the UHV-prepared semiconductor film is photo-oxidized in the presence of band-gap radiation. The phenomena underlying this interesting effect have been elucidated in a kinetic and structural study using electron spectroscopy and x-ray-absorption spectroscopy. Selective photo-oxidation of Ge sites strongly suppresses the formation of Ge-Zn bonds at the interface: these act as nucleation sites for the growing metal film. A consistent picture emerges that also accounts for the very different behavior encountered during deposition of Ag films with and without photo-oxidation in the closely related Ag/GeS2 system.

Original language	English
Pages (from-to)	2054-2062
Number of pages	9
Journal	Physical Review B
Volume	52
Issue number	3
DOIs	https://doi.org/10.1103/PhysRevB.52.2054
Publication status	Published - 1 Jan 1995

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@article{1146178c9a904f04b0eda24795f9fabe,

title = "Quenching of metal sticking by photo-oxidation of an amorphous semiconductor: Zn on GeS2",

abstract = "The sticking probability of Zn on amorphous GeS2 is greatly reduced when the UHV-prepared semiconductor film is photo-oxidized in the presence of band-gap radiation. The phenomena underlying this interesting effect have been elucidated in a kinetic and structural study using electron spectroscopy and x-ray-absorption spectroscopy. Selective photo-oxidation of Ge sites strongly suppresses the formation of Ge-Zn bonds at the interface: these act as nucleation sites for the growing metal film. A consistent picture emerges that also accounts for the very different behavior encountered during deposition of Ag films with and without photo-oxidation in the closely related Ag/GeS2 system.",

author = "Horton, {J. Hugh} and Christopher Hardacre and Baddeley, {Christopher J.} and Moggridge, {Geoffrey D.} and Ormerod, {R. Mark} and Lambert, {Richard M.}",

year = "1995",

month = jan,

day = "1",

doi = "10.1103/PhysRevB.52.2054",

language = "English",

volume = "52",

pages = "2054--2062",

journal = "Physical Review B",

issn = "0163-1829",

publisher = "American Physical Society",

number = "3",

}

TY - JOUR

T1 - Quenching of metal sticking by photo-oxidation of an amorphous semiconductor

T2 - Zn on GeS2

AU - Horton, J. Hugh

AU - Hardacre, Christopher

AU - Baddeley, Christopher J.

AU - Moggridge, Geoffrey D.

AU - Ormerod, R. Mark

AU - Lambert, Richard M.

PY - 1995/1/1

Y1 - 1995/1/1

N2 - The sticking probability of Zn on amorphous GeS2 is greatly reduced when the UHV-prepared semiconductor film is photo-oxidized in the presence of band-gap radiation. The phenomena underlying this interesting effect have been elucidated in a kinetic and structural study using electron spectroscopy and x-ray-absorption spectroscopy. Selective photo-oxidation of Ge sites strongly suppresses the formation of Ge-Zn bonds at the interface: these act as nucleation sites for the growing metal film. A consistent picture emerges that also accounts for the very different behavior encountered during deposition of Ag films with and without photo-oxidation in the closely related Ag/GeS2 system.

AB - The sticking probability of Zn on amorphous GeS2 is greatly reduced when the UHV-prepared semiconductor film is photo-oxidized in the presence of band-gap radiation. The phenomena underlying this interesting effect have been elucidated in a kinetic and structural study using electron spectroscopy and x-ray-absorption spectroscopy. Selective photo-oxidation of Ge sites strongly suppresses the formation of Ge-Zn bonds at the interface: these act as nucleation sites for the growing metal film. A consistent picture emerges that also accounts for the very different behavior encountered during deposition of Ag films with and without photo-oxidation in the closely related Ag/GeS2 system.

UR - http://www.scopus.com/inward/record.url?scp=0010531042&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.52.2054

DO - 10.1103/PhysRevB.52.2054

M3 - Article

AN - SCOPUS:0010531042

SN - 0163-1829

VL - 52

SP - 2054

EP - 2062

JO - Physical Review B

JF - Physical Review B

IS - 3

ER -

Quenching of metal sticking by photo-oxidation of an amorphous semiconductor: Zn on GeS2

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