Abstract
We present de Haas-van Alphen and resistivity data on single crystals of the delafossite PdCoO2. At 295 K we measure an in-plane resistivity of 2.6 μΩcm, making PdCoO2 the most conductive oxide known. The low-temperature in-plane resistivity has an activated rather than the usual T5 temperature dependence, suggesting a gapping of effective scattering that is consistent with phonon drag. Below 10 K, the transport mean free path is ∼20 μm, approximately 105 lattice spacings and an astoundingly high value for flux-grown crystals. We discuss the origin of these properties in light of our data.
| Original language | English |
|---|---|
| Article number | 116401 |
| Number of pages | 5 |
| Journal | Physical Review Letters |
| Volume | 109 |
| Issue number | 11 |
| Early online date | 23 Jul 2012 |
| DOIs | |
| Publication status | Published - Sept 2012 |
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Dive into the research topics of 'Quantum oscillations and high carrier mobility in the delafossite PdCoO2'. Together they form a unique fingerprint.Projects
- 2 Finished
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Topological Protection and NonEquilibriu: Topological Protection and NonEquilibrium States in Strongly Correlated Electron Systems
Wahl, P. (PI), Baumberger, F. (CoI), Davis, S. (CoI), Green, A. (CoI), Hooley, C. (CoI), Keeling, J. (CoI) & Mackenzie, A. (CoI)
1/09/11 → 31/08/17
Project: Standard
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Wolfson Research Merit Award (WRMA): Royal Society Wolfson Research Merit Award
Mackenzie, A. (PI)
1/04/11 → 31/10/13
Project: Standard
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