Quantum efficiency and oscillator strength of site-controlled InAs quantum dots

F. Albert; S. Stobbe; C. Schneider; T. Heindel; S. Reitzenstein; Sven Höfling; P. Lodahl; L. Worschech; A. Forchel

doi:10.1063/1.3393988

Quantum efficiency and oscillator strength of site-controlled InAs quantum dots

F. Albert^*, S. Stobbe, C. Schneider, T. Heindel, S. Reitzenstein, Sven Höfling, P. Lodahl, L. Worschech, A. Forchel

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

We report on time-resolved photoluminescence spectroscopy to determine the oscillator strength (OS) and the quantum efficiency (QE) of site-controlled InAs quantum dots nucleating on patterned nanoholes. These two quantities are determined by measurements on site-controlled quantum dot (SCQD) samples with varying thickness of the capping layer. We determine radiative and nonradiative decay rates, from which we calculate an OS of 10.1 +/- 2.6 and an encouragingly high QE of (47 +/- 14)% for the SCQDs. The nonideal QE is attributed to nonradiative recombination at the etched nanohole interface.

Original language	English
Article number	151102
Number of pages	3
Journal	Applied Physics Letters
Volume	96
Issue number	15
DOIs	https://doi.org/10.1063/1.3393988
Publication status	Published - 12 Apr 2010

Keywords

III-V semiconductors
indium compounds
nanostructured materials
oscillator strengths
photoluminescence
semiconductor quantum dots
time resolved spectra

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10.1063/1.3393988

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title = "Quantum efficiency and oscillator strength of site-controlled InAs quantum dots",

abstract = "We report on time-resolved photoluminescence spectroscopy to determine the oscillator strength (OS) and the quantum efficiency (QE) of site-controlled InAs quantum dots nucleating on patterned nanoholes. These two quantities are determined by measurements on site-controlled quantum dot (SCQD) samples with varying thickness of the capping layer. We determine radiative and nonradiative decay rates, from which we calculate an OS of 10.1 +/- 2.6 and an encouragingly high QE of (47 +/- 14)% for the SCQDs. The nonideal QE is attributed to nonradiative recombination at the etched nanohole interface.",

keywords = "III-V semiconductors, indium compounds, nanostructured materials, oscillator strengths, photoluminescence, semiconductor quantum dots, time resolved spectra",

author = "F. Albert and S. Stobbe and C. Schneider and T. Heindel and S. Reitzenstein and Sven H{\"o}fling and P. Lodahl and L. Worschech and A. Forchel",

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doi = "10.1063/1.3393988",

language = "English",

volume = "96",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Quantum efficiency and oscillator strength of site-controlled InAs quantum dots

AU - Albert, F.

AU - Stobbe, S.

AU - Schneider, C.

AU - Heindel, T.

AU - Reitzenstein, S.

AU - Höfling, Sven

AU - Lodahl, P.

AU - Worschech, L.

AU - Forchel, A.

PY - 2010/4/12

Y1 - 2010/4/12

N2 - We report on time-resolved photoluminescence spectroscopy to determine the oscillator strength (OS) and the quantum efficiency (QE) of site-controlled InAs quantum dots nucleating on patterned nanoholes. These two quantities are determined by measurements on site-controlled quantum dot (SCQD) samples with varying thickness of the capping layer. We determine radiative and nonradiative decay rates, from which we calculate an OS of 10.1 +/- 2.6 and an encouragingly high QE of (47 +/- 14)% for the SCQDs. The nonideal QE is attributed to nonradiative recombination at the etched nanohole interface.

AB - We report on time-resolved photoluminescence spectroscopy to determine the oscillator strength (OS) and the quantum efficiency (QE) of site-controlled InAs quantum dots nucleating on patterned nanoholes. These two quantities are determined by measurements on site-controlled quantum dot (SCQD) samples with varying thickness of the capping layer. We determine radiative and nonradiative decay rates, from which we calculate an OS of 10.1 +/- 2.6 and an encouragingly high QE of (47 +/- 14)% for the SCQDs. The nonideal QE is attributed to nonradiative recombination at the etched nanohole interface.

KW - III-V semiconductors

KW - indium compounds

KW - nanostructured materials

KW - oscillator strengths

KW - photoluminescence

KW - semiconductor quantum dots

KW - time resolved spectra

U2 - 10.1063/1.3393988

DO - 10.1063/1.3393988

M3 - Article

SN - 0003-6951

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

M1 - 151102

ER -

Quantum efficiency and oscillator strength of site-controlled InAs quantum dots

Abstract

Keywords

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