Quantum confined Stark effect and ultrafast absorption dynamics in bilayer InAs quantum dot waveguide

David Malins; Alvaro Gomez-Iglesias; P Spencer; E Clarke; Ray Murray; Alan Miller

doi:10.1049/el:20071221

Quantum confined Stark effect and ultrafast absorption dynamics in bilayer InAs quantum dot waveguide

David Malins
, Alvaro Gomez-Iglesias
, P Spencer
, E Clarke
, Ray Murray
, Alan Miller

School of Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

Abstract

A Stark shift of 40 nm at 1340 nm in a bilayer InAs/GaAs quantum dot ridge waveguide is reported. Time-resolved measurements indicate absorption recovery times of 7 ps at -8 V Such favourable properties are desirable for intensity and phase modulators.

Original language	English
Pages (from-to)	686-688
Number of pages	3
Journal	Electronics Letters
Volume	43
Issue number	12
DOIs	https://doi.org/10.1049/el:20071221
Publication status	Published - 7 Jun 2007

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@article{6625734281c345bd8b880f5178b5abf5,

title = "Quantum confined Stark effect and ultrafast absorption dynamics in bilayer InAs quantum dot waveguide",

abstract = "A Stark shift of 40 nm at 1340 nm in a bilayer InAs/GaAs quantum dot ridge waveguide is reported. Time-resolved measurements indicate absorption recovery times of 7 ps at -8 V Such favourable properties are desirable for intensity and phase modulators.",

author = "David Malins and Alvaro Gomez-Iglesias and P Spencer and E Clarke and Ray Murray and Alan Miller",

year = "2007",

month = jun,

day = "7",

doi = "10.1049/el:20071221",

language = "English",

volume = "43",

pages = "686--688",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley \& Sons, Ltd",

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TY - JOUR

T1 - Quantum confined Stark effect and ultrafast absorption dynamics in bilayer InAs quantum dot waveguide

AU - Malins, David

AU - Gomez-Iglesias, Alvaro

AU - Spencer, P

AU - Clarke, E

AU - Murray, Ray

AU - Miller, Alan

PY - 2007/6/7

Y1 - 2007/6/7

N2 - A Stark shift of 40 nm at 1340 nm in a bilayer InAs/GaAs quantum dot ridge waveguide is reported. Time-resolved measurements indicate absorption recovery times of 7 ps at -8 V Such favourable properties are desirable for intensity and phase modulators.

AB - A Stark shift of 40 nm at 1340 nm in a bilayer InAs/GaAs quantum dot ridge waveguide is reported. Time-resolved measurements indicate absorption recovery times of 7 ps at -8 V Such favourable properties are desirable for intensity and phase modulators.

UR - https://www.scopus.com/pages/publications/34249979014

UR - http://ieeexplore.ieee.org/xpl/tocresult.jsp?isnumber=4237039&isYear=2007

U2 - 10.1049/el:20071221

DO - 10.1049/el:20071221

M3 - Article

SN - 0013-5194

VL - 43

SP - 686

EP - 688

JO - Electronics Letters

JF - Electronics Letters

IS - 12

ER -

Quantum confined Stark effect and ultrafast absorption dynamics in bilayer InAs quantum dot waveguide

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