Abstract
High precision electron probe microanalysis (EPMA) has been used to measure the correlation of oxygen deficiency with carrier concentration in thin films of amorphous indium oxide. This has shown that there are ten times as many oxygen vacancies as would be expected from the carrier concentration measurements, giving a doping efficiency of 0.1. It is therefore clear that the doping mechanism is more complex than the usual picture of every oxygen vacancy producing two free electrons.
| Original language | English |
|---|---|
| Pages (from-to) | 2506-2508 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 58 |
| Issue number | 22 |
| Publication status | Published - 3 Jun 1991 |