Power gain up to gigahertz frequencies in three-terminal nanojunctions at room temperature

D. Spanheimer; C. R. Mueller; J. Heinrich; Sven Höfling; L. Worschech; A. Forchel

doi:10.1063/1.3222941

Power gain up to gigahertz frequencies in three-terminal nanojunctions at room temperature

D. Spanheimer, C. R. Mueller^*, J. Heinrich, Sven Höfling, L. Worschech, A. Forchel

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Direct current and alternating current characteristics of three-terminal nanojunctions (TTJs) are studied at room temperature. The TTJs are based on a modulation-doped GaAs/AlGaAs heterostructure and were structured by applying mask techniques and wet chemical etching. Devices with lateral dimensions of a few tens of nanometers and with narrow gold contacts were fabricated and transistor characteristics with maximum transconductance values exceeding 100 mu A/V are demonstrated. By analyzing the scattering parameters of the TTJs, power gain up to 1.5 GHz is observed. This gigahertz amplification is related to the implemented narrow gold contacts which control the quantum capacitance of the electron reservoirs.

Original language	English
Article number	103502
Number of pages	3
Journal	Applied Physics Letters
Volume	95
Issue number	10
DOIs	https://doi.org/10.1063/1.3222941
Publication status	Published - 7 Sept 2009

Keywords

aluminium compounds
etching
gallium
gallium arsenide
gold
III-V semiconductors
masks
nanoelectronics
semiconductor heterojunctions
semiconductor-metal boundaries
QUANTUM POINT-CONTACT
Y-BRANCH NANOJUNCTION
BALLISTIC JUNCTIONS
ADMITTANCE
CAPACITANCE
OPERATION
TRANSPORT

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10.1063/1.3222941

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@article{8da134a7f8f74c38ac07fc6ce0a45a12,

title = "Power gain up to gigahertz frequencies in three-terminal nanojunctions at room temperature",

abstract = "Direct current and alternating current characteristics of three-terminal nanojunctions (TTJs) are studied at room temperature. The TTJs are based on a modulation-doped GaAs/AlGaAs heterostructure and were structured by applying mask techniques and wet chemical etching. Devices with lateral dimensions of a few tens of nanometers and with narrow gold contacts were fabricated and transistor characteristics with maximum transconductance values exceeding 100 mu A/V are demonstrated. By analyzing the scattering parameters of the TTJs, power gain up to 1.5 GHz is observed. This gigahertz amplification is related to the implemented narrow gold contacts which control the quantum capacitance of the electron reservoirs.",

keywords = "aluminium compounds, etching, gallium, gallium arsenide, gold, III-V semiconductors, masks, nanoelectronics, semiconductor heterojunctions, semiconductor-metal boundaries, QUANTUM POINT-CONTACT, Y-BRANCH NANOJUNCTION, BALLISTIC JUNCTIONS, ADMITTANCE, CAPACITANCE, OPERATION, TRANSPORT",

author = "D. Spanheimer and Mueller, {C. R.} and J. Heinrich and Sven H{\"o}fling and L. Worschech and A. Forchel",

year = "2009",

month = sep,

day = "7",

doi = "10.1063/1.3222941",

language = "English",

volume = "95",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "10",

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T1 - Power gain up to gigahertz frequencies in three-terminal nanojunctions at room temperature

AU - Spanheimer, D.

AU - Mueller, C. R.

AU - Heinrich, J.

AU - Höfling, Sven

AU - Worschech, L.

AU - Forchel, A.

PY - 2009/9/7

Y1 - 2009/9/7

N2 - Direct current and alternating current characteristics of three-terminal nanojunctions (TTJs) are studied at room temperature. The TTJs are based on a modulation-doped GaAs/AlGaAs heterostructure and were structured by applying mask techniques and wet chemical etching. Devices with lateral dimensions of a few tens of nanometers and with narrow gold contacts were fabricated and transistor characteristics with maximum transconductance values exceeding 100 mu A/V are demonstrated. By analyzing the scattering parameters of the TTJs, power gain up to 1.5 GHz is observed. This gigahertz amplification is related to the implemented narrow gold contacts which control the quantum capacitance of the electron reservoirs.

AB - Direct current and alternating current characteristics of three-terminal nanojunctions (TTJs) are studied at room temperature. The TTJs are based on a modulation-doped GaAs/AlGaAs heterostructure and were structured by applying mask techniques and wet chemical etching. Devices with lateral dimensions of a few tens of nanometers and with narrow gold contacts were fabricated and transistor characteristics with maximum transconductance values exceeding 100 mu A/V are demonstrated. By analyzing the scattering parameters of the TTJs, power gain up to 1.5 GHz is observed. This gigahertz amplification is related to the implemented narrow gold contacts which control the quantum capacitance of the electron reservoirs.

KW - aluminium compounds

KW - etching

KW - gallium

KW - gallium arsenide

KW - gold

KW - III-V semiconductors

KW - masks

KW - nanoelectronics

KW - semiconductor heterojunctions

KW - semiconductor-metal boundaries

KW - QUANTUM POINT-CONTACT

KW - Y-BRANCH NANOJUNCTION

KW - BALLISTIC JUNCTIONS

KW - ADMITTANCE

KW - CAPACITANCE

KW - OPERATION

KW - TRANSPORT

U2 - 10.1063/1.3222941

DO - 10.1063/1.3222941

M3 - Article

SN - 0003-6951

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

M1 - 103502

ER -

Power gain up to gigahertz frequencies in three-terminal nanojunctions at room temperature

Abstract

Keywords

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