Polarization switching characteristics of BiFeO3 thin films epitaxially grown on Pt/MgO at a low temperature

Sangwoo Ryu; Jong Yeog Son; Young-Han Shin; Hyun M. Jang; James F. Scott

doi:10.1063/1.3275012

Polarization switching characteristics of BiFeO3 thin films epitaxially grown on Pt/MgO at a low temperature

Sangwoo Ryu, Jong Yeog Son, Young-Han Shin, Hyun M. Jang^*, James F. Scott

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

An [001]-oriented BiFeO3 (BFO) thin film having a pseudotetragonal symmetry was epitaxially grown on a Pt/MgO (001) substrate. The Pt-buffered MgO substrate enabled us to fabricate an epitaxial heterostructure at a temperature as low as 500 degrees C. We examined three major criteria for high-density ferroelectric memories using this BFO/Pt film capacitor. The polarization switching experiment has demonstrated that the film is electrically fatigue-free and possesses stable charge-retention characteristics with a reasonably large sensing margin of 22 mu C/cm(2). These suggest potential applicability of the present BFO/Pt heteroepitaxial film capacitor to nonvolatile memories.

Original language	English
Article number	242902
Number of pages	3
Journal	Applied Physics Letters
Volume	95
Issue number	24
DOIs	https://doi.org/10.1063/1.3275012
Publication status	Published - 14 Dec 2009

Keywords

bismuth compounds
dielectric polarisation
epitaxial growth
epitaxial layers
ferroelectric capacitors
ferroelectric storage
ferroelectric switching
ferroelectric thin films
sputter deposition
thin film capacitors
FERROELECTRIC MEMORIES
HETEROSTRUCTURES
NANOSCALE
PHYSICS

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title = "Polarization switching characteristics of BiFeO3 thin films epitaxially grown on Pt/MgO at a low temperature",

abstract = "An [001]-oriented BiFeO3 (BFO) thin film having a pseudotetragonal symmetry was epitaxially grown on a Pt/MgO (001) substrate. The Pt-buffered MgO substrate enabled us to fabricate an epitaxial heterostructure at a temperature as low as 500 degrees C. We examined three major criteria for high-density ferroelectric memories using this BFO/Pt film capacitor. The polarization switching experiment has demonstrated that the film is electrically fatigue-free and possesses stable charge-retention characteristics with a reasonably large sensing margin of 22 mu C/cm(2). These suggest potential applicability of the present BFO/Pt heteroepitaxial film capacitor to nonvolatile memories.",

keywords = "bismuth compounds, dielectric polarisation, epitaxial growth, epitaxial layers, ferroelectric capacitors, ferroelectric storage, ferroelectric switching, ferroelectric thin films, sputter deposition, thin film capacitors, FERROELECTRIC MEMORIES, HETEROSTRUCTURES, NANOSCALE, PHYSICS",

author = "Sangwoo Ryu and Son, {Jong Yeog} and Young-Han Shin and Jang, {Hyun M.} and Scott, {James F.}",

year = "2009",

month = dec,

day = "14",

doi = "10.1063/1.3275012",

language = "English",

volume = "95",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "24",

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TY - JOUR

T1 - Polarization switching characteristics of BiFeO3 thin films epitaxially grown on Pt/MgO at a low temperature

AU - Ryu, Sangwoo

AU - Son, Jong Yeog

AU - Shin, Young-Han

AU - Jang, Hyun M.

AU - Scott, James F.

PY - 2009/12/14

Y1 - 2009/12/14

N2 - An [001]-oriented BiFeO3 (BFO) thin film having a pseudotetragonal symmetry was epitaxially grown on a Pt/MgO (001) substrate. The Pt-buffered MgO substrate enabled us to fabricate an epitaxial heterostructure at a temperature as low as 500 degrees C. We examined three major criteria for high-density ferroelectric memories using this BFO/Pt film capacitor. The polarization switching experiment has demonstrated that the film is electrically fatigue-free and possesses stable charge-retention characteristics with a reasonably large sensing margin of 22 mu C/cm(2). These suggest potential applicability of the present BFO/Pt heteroepitaxial film capacitor to nonvolatile memories.

AB - An [001]-oriented BiFeO3 (BFO) thin film having a pseudotetragonal symmetry was epitaxially grown on a Pt/MgO (001) substrate. The Pt-buffered MgO substrate enabled us to fabricate an epitaxial heterostructure at a temperature as low as 500 degrees C. We examined three major criteria for high-density ferroelectric memories using this BFO/Pt film capacitor. The polarization switching experiment has demonstrated that the film is electrically fatigue-free and possesses stable charge-retention characteristics with a reasonably large sensing margin of 22 mu C/cm(2). These suggest potential applicability of the present BFO/Pt heteroepitaxial film capacitor to nonvolatile memories.

KW - bismuth compounds

KW - dielectric polarisation

KW - epitaxial growth

KW - epitaxial layers

KW - ferroelectric capacitors

KW - ferroelectric storage

KW - ferroelectric switching

KW - ferroelectric thin films

KW - sputter deposition

KW - thin film capacitors

KW - FERROELECTRIC MEMORIES

KW - HETEROSTRUCTURES

KW - NANOSCALE

KW - PHYSICS

U2 - 10.1063/1.3275012

DO - 10.1063/1.3275012

M3 - Article

SN - 0003-6951

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

M1 - 242902

ER -

Polarization switching characteristics of BiFeO3 thin films epitaxially grown on Pt/MgO at a low temperature

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Keywords

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