Polarization switching characteristics of BiFeO3 thin films epitaxially grown on Pt/MgO at a low temperature

Sangwoo Ryu, Jong Yeog Son, Young-Han Shin, Hyun M. Jang*, James F. Scott

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

32 Citations (Scopus)

Abstract

An [001]-oriented BiFeO3 (BFO) thin film having a pseudotetragonal symmetry was epitaxially grown on a Pt/MgO (001) substrate. The Pt-buffered MgO substrate enabled us to fabricate an epitaxial heterostructure at a temperature as low as 500 degrees C. We examined three major criteria for high-density ferroelectric memories using this BFO/Pt film capacitor. The polarization switching experiment has demonstrated that the film is electrically fatigue-free and possesses stable charge-retention characteristics with a reasonably large sensing margin of 22 mu C/cm(2). These suggest potential applicability of the present BFO/Pt heteroepitaxial film capacitor to nonvolatile memories.

Original languageEnglish
Article number242902
Number of pages3
JournalApplied Physics Letters
Volume95
Issue number24
DOIs
Publication statusPublished - 14 Dec 2009

Keywords

  • bismuth compounds
  • dielectric polarisation
  • epitaxial growth
  • epitaxial layers
  • ferroelectric capacitors
  • ferroelectric storage
  • ferroelectric switching
  • ferroelectric thin films
  • sputter deposition
  • thin film capacitors
  • FERROELECTRIC MEMORIES
  • HETEROSTRUCTURES
  • NANOSCALE
  • PHYSICS

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