Photoluminescence quenching mechanisms in type II InAs/GaInSb QWs on InAs substrates

M. Dyksik; M. Motyka; M. Kurka; K. Ryczko; M. Dallner; S. Höfling; M. Kamp; G. Sęk; J. Misiewicz

doi:10.1007/s11082-016-0667-y

Photoluminescence quenching mechanisms in type II InAs/GaInSb QWs on InAs substrates

M. Dyksik^*, M. Motyka, M. Kurka, K. Ryczko, M. Dallner, S. Höfling, M. Kamp, G. Sęk, J. Misiewicz

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Optical properties of AlSb/InAs/GaInSb/InAs/AlSb quantum wells (QWs) grown on an InAs substrate were investigated from the point of view of room temperature emission in the mid- and long-wavelength infrared ranges. By means of two independent techniques of optical spectroscopy, photoreflectance and temperature-dependent photoluminescence, it was proven that the main process limiting the performance of such InAs substrate-based type II structures is related to the escape of carriers from the hole ground state of the QW. Two nonradiative recombination channels were identified. The main process was attributed to holes tunneling to the valence band of the GaAsSb spacing layer and the second one with trapping of holes by native defects located in the same layer.

Original language	English
Article number	401
Number of pages	8
Journal	Optical and Quantum Electronics
Volume	48
Early online date	28 Jul 2016
DOIs	https://doi.org/10.1007/s11082-016-0667-y
Publication status	Published - Aug 2016

Keywords

Fourier-transform spectroscopy
Localized states
Mid-infrared photoluminescence
Type II quantum wells

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Hoefling_2016_OQE_Photoluminescence_CC
© The Author(s) 2016. Open Access. This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
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Cite this

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title = "Photoluminescence quenching mechanisms in type II InAs/GaInSb QWs on InAs substrates",

abstract = "Optical properties of AlSb/InAs/GaInSb/InAs/AlSb quantum wells (QWs) grown on an InAs substrate were investigated from the point of view of room temperature emission in the mid- and long-wavelength infrared ranges. By means of two independent techniques of optical spectroscopy, photoreflectance and temperature-dependent photoluminescence, it was proven that the main process limiting the performance of such InAs substrate-based type II structures is related to the escape of carriers from the hole ground state of the QW. Two nonradiative recombination channels were identified. The main process was attributed to holes tunneling to the valence band of the GaAsSb spacing layer and the second one with trapping of holes by native defects located in the same layer.",

keywords = "Fourier-transform spectroscopy, Localized states, Mid-infrared photoluminescence, Type II quantum wells",

author = "M. Dyksik and M. Motyka and M. Kurka and K. Ryczko and M. Dallner and S. H{\"o}fling and M. Kamp and G. S{\c e}k and J. Misiewicz",

note = "We would like to acknowledge the National Science Centre of Poland for support within Grant No. 2014/15/B/ST7/04663.",

year = "2016",

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doi = "10.1007/s11082-016-0667-y",

language = "English",

volume = "48",

journal = "Optical and Quantum Electronics",

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AU - Dyksik, M.

AU - Motyka, M.

AU - Kurka, M.

AU - Ryczko, K.

AU - Dallner, M.

AU - Höfling, S.

AU - Kamp, M.

AU - Sęk, G.

AU - Misiewicz, J.

N1 - We would like to acknowledge the National Science Centre of Poland for support within Grant No. 2014/15/B/ST7/04663.

PY - 2016/8

Y1 - 2016/8

N2 - Optical properties of AlSb/InAs/GaInSb/InAs/AlSb quantum wells (QWs) grown on an InAs substrate were investigated from the point of view of room temperature emission in the mid- and long-wavelength infrared ranges. By means of two independent techniques of optical spectroscopy, photoreflectance and temperature-dependent photoluminescence, it was proven that the main process limiting the performance of such InAs substrate-based type II structures is related to the escape of carriers from the hole ground state of the QW. Two nonradiative recombination channels were identified. The main process was attributed to holes tunneling to the valence band of the GaAsSb spacing layer and the second one with trapping of holes by native defects located in the same layer.

AB - Optical properties of AlSb/InAs/GaInSb/InAs/AlSb quantum wells (QWs) grown on an InAs substrate were investigated from the point of view of room temperature emission in the mid- and long-wavelength infrared ranges. By means of two independent techniques of optical spectroscopy, photoreflectance and temperature-dependent photoluminescence, it was proven that the main process limiting the performance of such InAs substrate-based type II structures is related to the escape of carriers from the hole ground state of the QW. Two nonradiative recombination channels were identified. The main process was attributed to holes tunneling to the valence band of the GaAsSb spacing layer and the second one with trapping of holes by native defects located in the same layer.

KW - Fourier-transform spectroscopy

KW - Localized states

KW - Mid-infrared photoluminescence

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VL - 48

JO - Optical and Quantum Electronics

JF - Optical and Quantum Electronics

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ER -

Photoluminescence quenching mechanisms in type II InAs/GaInSb QWs on InAs substrates

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Keywords

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