Photocurrent-voltage relation of resonant tunneling diode photodetectors

A. Pfenning; F. Hartmann; M. Rebello Sousa Dias; F. Langer; M. Kamp; L.K. Castelano; V. Lopez-Richard; G.E. Marques; Sven Höfling; L. Worschech

doi:10.1063/1.4929424

Photocurrent-voltage relation of resonant tunneling diode photodetectors

A. Pfenning, F. Hartmann, M. Rebello Sousa Dias, F. Langer, M. Kamp, L.K. Castelano, V. Lopez-Richard, G.E. Marques, Sven Höfling, L. Worschech

Research output: Contribution to journal › Article › peer-review

Abstract

We have investigated photodetectors based on an AlGaAs/GaAs double barrier structure with a nearby lattice-matched GaInNAs absorption layer. Photons with the telecommunication wavelength λ=1.3 μm lead to hole accumulation close to the double barrier inducing a voltage shift ΔV(V) of the current-voltage curve, which depends strongly on the bias voltage V. A model is proposed describing ΔV(V) and the photocurrent response in excellent agreement with the experimental observations. According to the model, an interplay of the resonant tunneling diode (RTD) quantum efficiency η(V), the lifetime of photogenerated and accumulated charge carriers τ(V), and the RTD current-voltage relation in the dark determines best working parameters of RTD photodetectors. Limitations and voltage dependencies of the photoresponse are discussed.

Original language	English
Article number	081104
Journal	Applied Physics Letters
Volume	107
Issue number	8
DOIs	https://doi.org/10.1063/1.4929424
Publication status	Published - 24 Aug 2015

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Hofling_2015_APL_Photocurrent
Copyright 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in volume 107 of Applied Physics Letters and may be found at http://dx.doi.org/10.1063/1.4929424
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title = "Photocurrent-voltage relation of resonant tunneling diode photodetectors",

abstract = "We have investigated photodetectors based on an AlGaAs/GaAs double barrier structure with a nearby lattice-matched GaInNAs absorption layer. Photons with the telecommunication wavelength λ=1.3 μm lead to hole accumulation close to the double barrier inducing a voltage shift ΔV(V) of the current-voltage curve, which depends strongly on the bias voltage V. A model is proposed describing ΔV(V) and the photocurrent response in excellent agreement with the experimental observations. According to the model, an interplay of the resonant tunneling diode (RTD) quantum efficiency η(V), the lifetime of photogenerated and accumulated charge carriers τ(V), and the RTD current-voltage relation in the dark determines best working parameters of RTD photodetectors. Limitations and voltage dependencies of the photoresponse are discussed.",

author = "A. Pfenning and F. Hartmann and {Rebello Sousa Dias}, M. and F. Langer and M. Kamp and L.K. Castelano and V. Lopez-Richard and G.E. Marques and Sven H{\"o}fling and L. Worschech",

note = "The authors are grateful for financial support by the BMBF via national project EIPHRIK (FKZ: 13N10710), the European Union (FPVII (2007-2013) under Grant Agreement No. 318287 LANDAUER), and the Brazilian Agencies FAPESP (2012/51415-3 and 2012/13052-6), CNPq and CAPES. ",

year = "2015",

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doi = "10.1063/1.4929424",

language = "English",

volume = "107",

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TY - JOUR

T1 - Photocurrent-voltage relation of resonant tunneling diode photodetectors

AU - Pfenning, A.

AU - Hartmann, F.

AU - Rebello Sousa Dias, M.

AU - Langer, F.

AU - Kamp, M.

AU - Castelano, L.K.

AU - Lopez-Richard, V.

AU - Marques, G.E.

AU - Höfling, Sven

AU - Worschech, L.

N1 - The authors are grateful for financial support by the BMBF via national project EIPHRIK (FKZ: 13N10710), the European Union (FPVII (2007-2013) under Grant Agreement No. 318287 LANDAUER), and the Brazilian Agencies FAPESP (2012/51415-3 and 2012/13052-6), CNPq and CAPES.

PY - 2015/8/24

Y1 - 2015/8/24

N2 - We have investigated photodetectors based on an AlGaAs/GaAs double barrier structure with a nearby lattice-matched GaInNAs absorption layer. Photons with the telecommunication wavelength λ=1.3 μm lead to hole accumulation close to the double barrier inducing a voltage shift ΔV(V) of the current-voltage curve, which depends strongly on the bias voltage V. A model is proposed describing ΔV(V) and the photocurrent response in excellent agreement with the experimental observations. According to the model, an interplay of the resonant tunneling diode (RTD) quantum efficiency η(V), the lifetime of photogenerated and accumulated charge carriers τ(V), and the RTD current-voltage relation in the dark determines best working parameters of RTD photodetectors. Limitations and voltage dependencies of the photoresponse are discussed.

AB - We have investigated photodetectors based on an AlGaAs/GaAs double barrier structure with a nearby lattice-matched GaInNAs absorption layer. Photons with the telecommunication wavelength λ=1.3 μm lead to hole accumulation close to the double barrier inducing a voltage shift ΔV(V) of the current-voltage curve, which depends strongly on the bias voltage V. A model is proposed describing ΔV(V) and the photocurrent response in excellent agreement with the experimental observations. According to the model, an interplay of the resonant tunneling diode (RTD) quantum efficiency η(V), the lifetime of photogenerated and accumulated charge carriers τ(V), and the RTD current-voltage relation in the dark determines best working parameters of RTD photodetectors. Limitations and voltage dependencies of the photoresponse are discussed.

U2 - 10.1063/1.4929424

DO - 10.1063/1.4929424

M3 - Article

AN - SCOPUS:84940118795

SN - 0003-6951

VL - 107

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 081104

ER -

Photocurrent-voltage relation of resonant tunneling diode photodetectors

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