P-I-N-P top-emitting organic light-emitting diodes with MoOx as the electrical and optical modification layers

Guohua Xie*, Karsten Fehse, Karl Leo, Malte C. Gather

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

We report a P-I-N-P top-emitting organic light-emitting diode (TEOLED) that contains an additional p-doped hole transporting layer between the conventional n-doped electron transporting layer and the top cathode. The TEOLED comprises MoOx in different positions of the device stack (i) as a buffer layer and a p-dopant to improve the hole injection efficiency from the anode side and to form an abrupt tunnel junction at the cathode side and (ii) a capping layer to tailor the out-coupling efficiency. The N-P tunnel junction provides a simple approach for balancing charge injection and thus results in simultaneous improvements on current, power and external quantum efficiencies (maxima of 39, 35, and 45%, respectively).

Original languageEnglish
Pages (from-to)1168-1174
Number of pages7
JournalPhysica Status Solidi A-Applications and Materials Science
Volume211
Issue number5
Early online date13 Feb 2014
DOIs
Publication statusPublished - May 2014

Keywords

  • Electrical doping
  • P-I-N-P
  • Top-emitting
  • Tunnel junction
  • DOPED transport layers
  • Highly efficient
  • Molybdenum trioxide
  • Devices
  • Microdisplays
  • Emission

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