P-I-N-P top-emitting organic light-emitting diodes with MoOx as the electrical and optical modification layers

Guohua Xie; Karsten Fehse; Karl Leo; Malte C. Gather

doi:10.1002/pssa.201330527

P-I-N-P top-emitting organic light-emitting diodes with MoOx as the electrical and optical modification layers

Guohua Xie^*, Karsten Fehse, Karl Leo, Malte C. Gather

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

We report a P-I-N-P top-emitting organic light-emitting diode (TEOLED) that contains an additional p-doped hole transporting layer between the conventional n-doped electron transporting layer and the top cathode. The TEOLED comprises MoOx in different positions of the device stack (i) as a buffer layer and a p-dopant to improve the hole injection efficiency from the anode side and to form an abrupt tunnel junction at the cathode side and (ii) a capping layer to tailor the out-coupling efficiency. The N-P tunnel junction provides a simple approach for balancing charge injection and thus results in simultaneous improvements on current, power and external quantum efficiencies (maxima of 39, 35, and 45%, respectively).

Original language	English
Pages (from-to)	1168-1174
Number of pages	7
Journal	Physica Status Solidi A-Applications and Materials Science
Volume	211
Issue number	5
Early online date	13 Feb 2014
DOIs	https://doi.org/10.1002/pssa.201330527
Publication status	Published - May 2014

Keywords

Electrical doping
P-I-N-P
Top-emitting
Tunnel junction
DOPED transport layers
Highly efficient
Molybdenum trioxide
Devices
Microdisplays
Emission

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@article{d5088934657c463da028b9a3dd56281f,

title = "P-I-N-P top-emitting organic light-emitting diodes with MoOx as the electrical and optical modification layers",

abstract = "We report a P-I-N-P top-emitting organic light-emitting diode (TEOLED) that contains an additional p-doped hole transporting layer between the conventional n-doped electron transporting layer and the top cathode. The TEOLED comprises MoOx in different positions of the device stack (i) as a buffer layer and a p-dopant to improve the hole injection efficiency from the anode side and to form an abrupt tunnel junction at the cathode side and (ii) a capping layer to tailor the out-coupling efficiency. The N-P tunnel junction provides a simple approach for balancing charge injection and thus results in simultaneous improvements on current, power and external quantum efficiencies (maxima of 39, 35, and 45%, respectively).",

keywords = "Electrical doping, P-I-N-P, Top-emitting, Tunnel junction, DOPED transport layers, Highly efficient, Molybdenum trioxide, Devices, Microdisplays, Emission",

author = "Guohua Xie and Karsten Fehse and Karl Leo and Gather, {Malte C.}",

note = "G. Xie acknowledges the Alexander von Humboldt Foundation for financial support.",

year = "2014",

month = may,

doi = "10.1002/pssa.201330527",

language = "English",

volume = "211",

pages = "1168--1174",

journal = "Physica Status Solidi A-Applications and Materials Science",

issn = "1862-6300",

publisher = "Wiley-Blackwell",

number = "5",

}

TY - JOUR

T1 - P-I-N-P top-emitting organic light-emitting diodes with MoOx as the electrical and optical modification layers

AU - Xie, Guohua

AU - Fehse, Karsten

AU - Leo, Karl

AU - Gather, Malte C.

N1 - G. Xie acknowledges the Alexander von Humboldt Foundation for financial support.

PY - 2014/5

Y1 - 2014/5

N2 - We report a P-I-N-P top-emitting organic light-emitting diode (TEOLED) that contains an additional p-doped hole transporting layer between the conventional n-doped electron transporting layer and the top cathode. The TEOLED comprises MoOx in different positions of the device stack (i) as a buffer layer and a p-dopant to improve the hole injection efficiency from the anode side and to form an abrupt tunnel junction at the cathode side and (ii) a capping layer to tailor the out-coupling efficiency. The N-P tunnel junction provides a simple approach for balancing charge injection and thus results in simultaneous improvements on current, power and external quantum efficiencies (maxima of 39, 35, and 45%, respectively).

AB - We report a P-I-N-P top-emitting organic light-emitting diode (TEOLED) that contains an additional p-doped hole transporting layer between the conventional n-doped electron transporting layer and the top cathode. The TEOLED comprises MoOx in different positions of the device stack (i) as a buffer layer and a p-dopant to improve the hole injection efficiency from the anode side and to form an abrupt tunnel junction at the cathode side and (ii) a capping layer to tailor the out-coupling efficiency. The N-P tunnel junction provides a simple approach for balancing charge injection and thus results in simultaneous improvements on current, power and external quantum efficiencies (maxima of 39, 35, and 45%, respectively).

KW - Electrical doping

KW - P-I-N-P

KW - Top-emitting

KW - Tunnel junction

KW - DOPED transport layers

KW - Highly efficient

KW - Molybdenum trioxide

KW - Devices

KW - Microdisplays

KW - Emission

U2 - 10.1002/pssa.201330527

DO - 10.1002/pssa.201330527

M3 - Article

SN - 1862-6300

VL - 211

SP - 1168

EP - 1174

JO - Physica Status Solidi A-Applications and Materials Science

JF - Physica Status Solidi A-Applications and Materials Science

IS - 5

ER -

P-I-N-P top-emitting organic light-emitting diodes with MoOx as the electrical and optical modification layers

Abstract

Keywords

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