Oscillator strength of optical transitions in InGaAsN/GaAsN/GaAs quantum wells

Experimental and theoretical considerations and results on the effect of nitrogen incorporation on the oscillator strength of optical transitions in InGaNAs/GaAs quantum wells (QWs) are presented. Therefore, a set of dilute nitride quantum well structures was grown by molecular beam epitaxy. Optical investigation via spectroscopic methods have been performed at various temperatures for both the as-grown samples, and after rapid thermal annealing. The fundamental transition energy and its oscillator strength vs. the QW composition have been systematically investigated. Additionally, the effect of the bandgap discontinuities on the transitions intensity has also been considered. The experimental data have been confronted with the band structure calculations within the effective mass approximation employing a two level repulsion model for the nitrogen-containing structures. The obtained results are crucial for possible future applications employing the quantum well in cavity structures and bringing the practical exploitation of quantum electrodynamics phenomena to the telecommunication spectral range.