Orientation dependent emission properties of columnar quantum dash laser structures

S. Hein*, P. Podemski, G. Sek, J. Misiewicz, P. Ridha, A. Fiore, G. Patriarche, Sven Höfling, A. Forchel

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


InAs columnar quantum dash (CQDash) structures on (100) InP have been realized by gas source molecular beam epitaxy for stacking numbers of up to 24. Laser devices show low threshold current densities between 0.73 and 3.5 kA/cm(2), dependent on the CQDash orientation within the cavity. Photoluminescence and electroluminescence measurements confirm a strong relationship between the polarization degree of the emission and the orientation of the CQDashes. Eventually, the polarization of the CQDash emission could be changed from predominantly transverse electric to transverse magnetic by simply altering the dash alignment relative to the light propagation axis.

Original languageEnglish
Article number241113
Number of pages3
JournalApplied Physics Letters
Issue number24
Publication statusPublished - 15 Jun 2009


  • electroluminescence
  • III-V semiconductors
  • indium compounds
  • laser beams
  • laser cavity resonators
  • molecular beam epitaxial growth
  • photoluminescence
  • quantum dash lasers
  • semiconductor growth
  • 1.55 MU-M
  • DOTS
  • INP


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