Orientation dependence of ferroelectric properties of pulsed-laser ablated Bi4-xNdxTi3O12 films

A Garg, ZH Barber, M Dawber, JF Scott, A Snedden, Philip Lightfoot

Research output: Other contribution

156 Citations (Scopus)

Abstract

Epitaxial (001)-, (118)-, and (104)-oriented Nd-doped Bi4Ti3O12 films have been grown by pulsed-laser deposition from a Bi4-xNdxTi3O12 (x=0.85) target on SrRuO3 coated single-crystal (100)-, (110)-, and (111)-oriented SrTiO3 substrates, respectively. X-ray diffraction illustrated a unique epitaxial relationship between film and substrate for all orientations. We observed a strong dependence of ferroelectric properties on the film orientation, with no ferroelectric activity in an (001)-oriented film; a remanent polarization 2P(r) of 12 muC/cm(2) and coercive field E-c of 120 kV/cm in a (118)-oriented film; and 2P(r)=40 muC/cm(2), E-c=50 kV/cm in a (104)-oriented film. The lack of ferroelectric activity along the c-axis is consistent with the orthorhombic nature of the crystal structure of the bulk material, as determined by powder neutron diffraction. (C) 2003 American Institute of Physics.

Original languageEnglish
Volume83
DOIs
Publication statusPublished - 22 Sept 2003

Keywords

  • THIN-FILMS
  • BISMUTH TITANATE
  • EPITAXIAL-GROWTH
  • BI4TI3O12
  • SRBI2NB2O9
  • DEPOSITION
  • FATIGUE
  • SRTIO3

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