Abstract
We show that p- and n-type light emitting field-effect transistors (LEFETs) can be made using "superyellow" as a light-emitting polymer, poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) as a p-type material and a naphthalene di-imide as an n-type material. By connecting two of these LEFETs, we have demonstrated a light emitting complementary inverter (LECI). The LECI exhibited electrical and optical characteristics in the first and third quadrant of the transfer characteristics with voltage gain of 6 and 8, respectively.
| Original language | English |
|---|---|
| Article number | 043304 |
| Pages (from-to) | - |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 96 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 25 Jan 2010 |
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