Organic light emitting complementary inverters

Ebinazar B. Namdas; Ifor D. W. Samuel; Deepak Shukla; Dianne M. Meyer; Yanming Sun; Ben B. Y. Hsu; Daniel Moses; Alan J. Heeger

doi:10.1063/1.3293293

Organic light emitting complementary inverters

Ebinazar B. Namdas, Ifor D. W. Samuel, Deepak Shukla, Dianne M. Meyer, Yanming Sun, Ben B. Y. Hsu, Daniel Moses, Alan J. Heeger

Research output: Contribution to journal › Article › peer-review

Abstract

We show that p- and n-type light emitting field-effect transistors (LEFETs) can be made using "superyellow" as a light-emitting polymer, poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) as a p-type material and a naphthalene di-imide as an n-type material. By connecting two of these LEFETs, we have demonstrated a light emitting complementary inverter (LECI). The LECI exhibited electrical and optical characteristics in the first and third quadrant of the transfer characteristics with voltage gain of 6 and 8, respectively.

Original language	English
Article number	043304
Pages (from-to)	-
Number of pages	3
Journal	Applied Physics Letters
Volume	96
Issue number	4
DOIs	https://doi.org/10.1063/1.3293293
Publication status	Published - 25 Jan 2010

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@article{bf5494c7569c4118ae6a0753d81104fe,

title = "Organic light emitting complementary inverters",

abstract = "We show that p- and n-type light emitting field-effect transistors (LEFETs) can be made using {"}superyellow{"} as a light-emitting polymer, poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) as a p-type material and a naphthalene di-imide as an n-type material. By connecting two of these LEFETs, we have demonstrated a light emitting complementary inverter (LECI). The LECI exhibited electrical and optical characteristics in the first and third quadrant of the transfer characteristics with voltage gain of 6 and 8, respectively.",

author = "Namdas, {Ebinazar B.} and Samuel, {Ifor D. W.} and Deepak Shukla and Meyer, {Dianne M.} and Yanming Sun and Hsu, {Ben B. Y.} and Daniel Moses and Heeger, {Alan J.}",

year = "2010",

month = jan,

day = "25",

doi = "10.1063/1.3293293",

language = "English",

volume = "96",

pages = "--",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "4",

}

TY - JOUR

T1 - Organic light emitting complementary inverters

AU - Namdas, Ebinazar B.

AU - Samuel, Ifor D. W.

AU - Shukla, Deepak

AU - Meyer, Dianne M.

AU - Sun, Yanming

AU - Hsu, Ben B. Y.

AU - Moses, Daniel

AU - Heeger, Alan J.

PY - 2010/1/25

Y1 - 2010/1/25

N2 - We show that p- and n-type light emitting field-effect transistors (LEFETs) can be made using "superyellow" as a light-emitting polymer, poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) as a p-type material and a naphthalene di-imide as an n-type material. By connecting two of these LEFETs, we have demonstrated a light emitting complementary inverter (LECI). The LECI exhibited electrical and optical characteristics in the first and third quadrant of the transfer characteristics with voltage gain of 6 and 8, respectively.

AB - We show that p- and n-type light emitting field-effect transistors (LEFETs) can be made using "superyellow" as a light-emitting polymer, poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) as a p-type material and a naphthalene di-imide as an n-type material. By connecting two of these LEFETs, we have demonstrated a light emitting complementary inverter (LECI). The LECI exhibited electrical and optical characteristics in the first and third quadrant of the transfer characteristics with voltage gain of 6 and 8, respectively.

U2 - 10.1063/1.3293293

DO - 10.1063/1.3293293

M3 - Article

SN - 0003-6951

VL - 96

SP - -

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

M1 - 043304

ER -

Organic light emitting complementary inverters

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