Organic flexible memristor with reduced operating voltage and high stability by interfacial control of conductive filament growth

Sin-Hyung Lee, Hea-Lim Park, Chang-Min Keum, In-Ho Lee, Min-Hoi Kim, Sin-Doo Lee

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)

Abstract

Herein, the underlying mechanisms for the growth of conductive filaments (CFs) at a metal–polymer electrolyte interface through ion migration in organic electrochemical metallization (ECM) memristor are presented. It is observed that the free volume of voids (nanopores) in the polymer electrolyte serves as the pathways of metal‐cations whereas the interfacial topography between an active electrode and a polymer electrolyte determines the nucleation sites of the CFs. The growth kinetics of the CFs and the resultant resistive memory are found to vary with the molecular weight of the polymer electrolyte and the metal protrusions at the interface. Our direct observations show that the free volume of voids of the polymer electrolyte, varied with the molecular weight, dictates the ion transport for the growth and the disruption of the CFs. Our organic ECM‐based memristor with a hetero‐electrolyte exhibits high mechanical flexibility, low switching voltages reduced by about three times compared to those of conventional devices, and stable memory retention for longer than 104 s under repeated cycles of bending.
Original languageEnglish
Article number1900044
Number of pages8
JournalPhysica Status Solidi - Rapid Research Letters
VolumeEarly View
Early online date27 Feb 2019
DOIs
Publication statusE-pub ahead of print - 27 Feb 2019

Keywords

  • Conductive filament growth
  • Electrochemical metallization
  • Ion migration
  • Organic memristors
  • Polymer electrolytes
  • Resistive switching

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