Optoelectronic Gate Dielectrics for High Brightness and High-Efficiency Light-Emitting Transistors

Ebinazar B. Namdas; Ben B. Y. Hsu; Jonathan D. Yuen; Ifor D. W. Samuel; Alan J. Heeger

doi:10.1002/adma.201004102

Optoelectronic Gate Dielectrics for High Brightness and High-Efficiency Light-Emitting Transistors

Ebinazar B. Namdas, Ben B. Y. Hsu, Jonathan D. Yuen, Ifor D. W. Samuel, Alan J. Heeger

Research output: Contribution to journal › Article › peer-review

Abstract

The optoelectronic gate light-emitting field-effect transistor (OEG LEFET) containing alternate SiO2 and SiNx dielectric stacks allows enhanced light emission for a designed spectrum range and provides reliable strength for a wide operating voltage. The device can improve the emission efficiency by 4.5 times in comparison to a reference LEFET with a SiNx gate dielectric and can reach a brightness as high as 4500 cd/m(2).

Original language	English
Pages (from-to)	2353-+
Number of pages	5
Journal	Advanced Materials
Volume	23
Issue number	20
DOIs	https://doi.org/10.1002/adma.201004102
Publication status	Published - 24 May 2011

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title = "Optoelectronic Gate Dielectrics for High Brightness and High-Efficiency Light-Emitting Transistors",

abstract = "The optoelectronic gate light-emitting field-effect transistor (OEG LEFET) containing alternate SiO2 and SiNx dielectric stacks allows enhanced light emission for a designed spectrum range and provides reliable strength for a wide operating voltage. The device can improve the emission efficiency by 4.5 times in comparison to a reference LEFET with a SiNx gate dielectric and can reach a brightness as high as 4500 cd/m(2).",

author = "Namdas, {Ebinazar B.} and Hsu, {Ben B. Y.} and Yuen, {Jonathan D.} and Samuel, {Ifor D. W.} and Heeger, {Alan J.}",

year = "2011",

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day = "24",

doi = "10.1002/adma.201004102",

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journal = "Advanced Materials",

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AU - Namdas, Ebinazar B.

AU - Hsu, Ben B. Y.

AU - Yuen, Jonathan D.

AU - Samuel, Ifor D. W.

AU - Heeger, Alan J.

PY - 2011/5/24

Y1 - 2011/5/24

N2 - The optoelectronic gate light-emitting field-effect transistor (OEG LEFET) containing alternate SiO2 and SiNx dielectric stacks allows enhanced light emission for a designed spectrum range and provides reliable strength for a wide operating voltage. The device can improve the emission efficiency by 4.5 times in comparison to a reference LEFET with a SiNx gate dielectric and can reach a brightness as high as 4500 cd/m(2).

AB - The optoelectronic gate light-emitting field-effect transistor (OEG LEFET) containing alternate SiO2 and SiNx dielectric stacks allows enhanced light emission for a designed spectrum range and provides reliable strength for a wide operating voltage. The device can improve the emission efficiency by 4.5 times in comparison to a reference LEFET with a SiNx gate dielectric and can reach a brightness as high as 4500 cd/m(2).

U2 - 10.1002/adma.201004102

DO - 10.1002/adma.201004102

M3 - Article

SN - 0935-9648

VL - 23

SP - 2353-+

JO - Advanced Materials

JF - Advanced Materials

IS - 20

ER -

Optoelectronic Gate Dielectrics for High Brightness and High-Efficiency Light-Emitting Transistors

Abstract

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