Optimizing the active region of interband cascade lasers for passive mode-locking

K. Ryczko; J. Misiewicz; S. Höfling; M. Kamp; G. Sęk

doi:10.1063/1.4973937

Optimizing the active region of interband cascade lasers for passive mode-locking

K. Ryczko, J. Misiewicz, S. Höfling, M. Kamp, G. Sęk

Research output: Contribution to journal › Article › peer-review

Abstract

The work proposes possible designs of active regions for a mode-locked interband cascade laser emitting in the mid infrared. For that purpose we investigated the electronic structure properties of respectively modified GaSb-based type II W-shaped quantum wells, including the effect of external bias in order to simultaneously fulfil the requirements for both the absorber as well as the gain sections of a device. The results show that introducing multiple InAs layers in type II InAs/GaInSb quantum wells or introducing a tensely-strained GaAsSb layer into “W-shaped” type II QWs offers significant difference in optical transitions’ oscillator strengths (characteristic lifetimes) of the two oppositely polarized parts of such a laser, being promising for utilization in mode-locked devices.

Original language	English
Article number	015015
Number of pages	7
Journal	AIP Advances
Volume	7
Issue number	1
DOIs	https://doi.org/10.1063/1.4973937
Publication status	Published - 9 Jan 2017

Access to Document

10.1063/1.4973937Licence: CC BY

Hoefling_2017_AIPAdv_PassiveMode-locking_CC
© 2017 Author(s). Open Access article All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
Final published version, 1.04 MBLicence: CC BY

Cite this

@article{310d8f30deb34ff9bb43f70173de8c6f,

title = "Optimizing the active region of interband cascade lasers for passive mode-locking",

abstract = "The work proposes possible designs of active regions for a mode-locked interband cascade laser emitting in the mid infrared. For that purpose we investigated the electronic structure properties of respectively modified GaSb-based type II W-shaped quantum wells, including the effect of external bias in order to simultaneously fulfil the requirements for both the absorber as well as the gain sections of a device. The results show that introducing multiple InAs layers in type II InAs/GaInSb quantum wells or introducing a tensely-strained GaAsSb layer into “W-shaped” type II QWs offers significant difference in optical transitions{\textquoteright} oscillator strengths (characteristic lifetimes) of the two oppositely polarized parts of such a laser, being promising for utilization in mode-locked devices.",

author = "K. Ryczko and J. Misiewicz and S. H{\"o}fling and M. Kamp and G. S{\c e}k",

note = "This project has received funding from the European Union{\textquoteright}s Horizon 2020 research and innovation programme under grant agreement No 636930 (iCspec).",

year = "2017",

month = jan,

day = "9",

doi = "10.1063/1.4973937",

language = "English",

volume = "7",

journal = "AIP Advances",

issn = "2158-3226",

publisher = "American Institute of Physics",

number = "1",

}

TY - JOUR

T1 - Optimizing the active region of interband cascade lasers for passive mode-locking

AU - Ryczko, K.

AU - Misiewicz, J.

AU - Höfling, S.

AU - Kamp, M.

AU - Sęk, G.

N1 - This project has received funding from the European Union’s Horizon 2020 research and innovation programme under grant agreement No 636930 (iCspec).

PY - 2017/1/9

Y1 - 2017/1/9

N2 - The work proposes possible designs of active regions for a mode-locked interband cascade laser emitting in the mid infrared. For that purpose we investigated the electronic structure properties of respectively modified GaSb-based type II W-shaped quantum wells, including the effect of external bias in order to simultaneously fulfil the requirements for both the absorber as well as the gain sections of a device. The results show that introducing multiple InAs layers in type II InAs/GaInSb quantum wells or introducing a tensely-strained GaAsSb layer into “W-shaped” type II QWs offers significant difference in optical transitions’ oscillator strengths (characteristic lifetimes) of the two oppositely polarized parts of such a laser, being promising for utilization in mode-locked devices.

AB - The work proposes possible designs of active regions for a mode-locked interband cascade laser emitting in the mid infrared. For that purpose we investigated the electronic structure properties of respectively modified GaSb-based type II W-shaped quantum wells, including the effect of external bias in order to simultaneously fulfil the requirements for both the absorber as well as the gain sections of a device. The results show that introducing multiple InAs layers in type II InAs/GaInSb quantum wells or introducing a tensely-strained GaAsSb layer into “W-shaped” type II QWs offers significant difference in optical transitions’ oscillator strengths (characteristic lifetimes) of the two oppositely polarized parts of such a laser, being promising for utilization in mode-locked devices.

U2 - 10.1063/1.4973937

DO - 10.1063/1.4973937

M3 - Article

SN - 2158-3226

VL - 7

JO - AIP Advances

JF - AIP Advances

IS - 1

M1 - 015015

ER -

Optimizing the active region of interband cascade lasers for passive mode-locking

Abstract

Access to Document

Fingerprint

Cite this