Optical signal processing on a silicon chip at 640Gb/s using slow-light

B. Corcoran; C. Monat; M. Pelusi; C. Grillet; T. P. White; Liam O'Faolain; T. F. Krauss; B. J. Eggleton; D. J. Moss

doi:10.1364/OE.18.007770

Optical signal processing on a silicon chip at 640Gb/s using slow-light

B. Corcoran, C. Monat, M. Pelusi, C. Grillet, T. P. White, Liam O'Faolain, T. F. Krauss, B. J. Eggleton, D. J. Moss

Research output: Contribution to journal › Article › peer-review

Abstract

We demonstrate optical performance monitoring of in-band optical signal to noise ratio (OSNR) and residual dispersion, at bit rates of 40Gb/s, 160Gb/s and 640Gb/s, using slow-light enhanced optical third harmonic generation (THG) in a compact (80 mu m) dispersion engineered 2D silicon photonic crystal waveguide. We show that there is no intrinsic degradation in the enhancement of the signal processing at 640Gb/s relative to that at 40Gb/s, and that this device should operate well above 1Tb/s. This work represents a record 16-fold increase in processing speed for a silicon device, and opens the door for slow light to play a key role in ultra-high bandwidth telecommunications systems. (C)2010 Optical Society of America

Original language	English
Pages (from-to)	7770-7781
Number of pages	12
Journal	Optics Express
Volume	18
Issue number	8
DOIs	https://doi.org/10.1364/OE.18.007770
Publication status	Published - 12 Apr 2010

Keywords

CRYSTAL WAVE-GUIDES
TUNABLE DISPERSION COMPENSATION
IN-BAND OSNR
3RD-HARMONIC GENERATION
WAVELENGTH CONVERSION
PARAMETRIC-AMPLIFIER
CHROMATIC DISPERSION
PHASE-MODULATION
ENHANCEMENT
NETWORKS

Access to Document

10.1364/OE.18.007770

Cite this

@article{f707616a1a854d84b27b7d9c34e1ab31,

title = "Optical signal processing on a silicon chip at 640Gb/s using slow-light",

abstract = "We demonstrate optical performance monitoring of in-band optical signal to noise ratio (OSNR) and residual dispersion, at bit rates of 40Gb/s, 160Gb/s and 640Gb/s, using slow-light enhanced optical third harmonic generation (THG) in a compact (80 mu m) dispersion engineered 2D silicon photonic crystal waveguide. We show that there is no intrinsic degradation in the enhancement of the signal processing at 640Gb/s relative to that at 40Gb/s, and that this device should operate well above 1Tb/s. This work represents a record 16-fold increase in processing speed for a silicon device, and opens the door for slow light to play a key role in ultra-high bandwidth telecommunications systems. (C)2010 Optical Society of America",

keywords = "CRYSTAL WAVE-GUIDES, TUNABLE DISPERSION COMPENSATION, IN-BAND OSNR, 3RD-HARMONIC GENERATION, WAVELENGTH CONVERSION, PARAMETRIC-AMPLIFIER, CHROMATIC DISPERSION, PHASE-MODULATION, ENHANCEMENT, NETWORKS",

author = "B. Corcoran and C. Monat and M. Pelusi and C. Grillet and White, {T. P.} and Liam O'Faolain and Krauss, {T. F.} and Eggleton, {B. J.} and Moss, {D. J.}",

year = "2010",

month = apr,

day = "12",

doi = "10.1364/OE.18.007770",

language = "English",

volume = "18",

pages = "7770--7781",

journal = "Optics Express",

issn = "1094-4087",

publisher = "Optica Publishing Group (formerly OSA)",

number = "8",

}

TY - JOUR

T1 - Optical signal processing on a silicon chip at 640Gb/s using slow-light

AU - Corcoran, B.

AU - Monat, C.

AU - Pelusi, M.

AU - Grillet, C.

AU - White, T. P.

AU - O'Faolain, Liam

AU - Krauss, T. F.

AU - Eggleton, B. J.

AU - Moss, D. J.

PY - 2010/4/12

Y1 - 2010/4/12

N2 - We demonstrate optical performance monitoring of in-band optical signal to noise ratio (OSNR) and residual dispersion, at bit rates of 40Gb/s, 160Gb/s and 640Gb/s, using slow-light enhanced optical third harmonic generation (THG) in a compact (80 mu m) dispersion engineered 2D silicon photonic crystal waveguide. We show that there is no intrinsic degradation in the enhancement of the signal processing at 640Gb/s relative to that at 40Gb/s, and that this device should operate well above 1Tb/s. This work represents a record 16-fold increase in processing speed for a silicon device, and opens the door for slow light to play a key role in ultra-high bandwidth telecommunications systems. (C)2010 Optical Society of America

AB - We demonstrate optical performance monitoring of in-band optical signal to noise ratio (OSNR) and residual dispersion, at bit rates of 40Gb/s, 160Gb/s and 640Gb/s, using slow-light enhanced optical third harmonic generation (THG) in a compact (80 mu m) dispersion engineered 2D silicon photonic crystal waveguide. We show that there is no intrinsic degradation in the enhancement of the signal processing at 640Gb/s relative to that at 40Gb/s, and that this device should operate well above 1Tb/s. This work represents a record 16-fold increase in processing speed for a silicon device, and opens the door for slow light to play a key role in ultra-high bandwidth telecommunications systems. (C)2010 Optical Society of America

KW - CRYSTAL WAVE-GUIDES

KW - TUNABLE DISPERSION COMPENSATION

KW - IN-BAND OSNR

KW - 3RD-HARMONIC GENERATION

KW - WAVELENGTH CONVERSION

KW - PARAMETRIC-AMPLIFIER

KW - CHROMATIC DISPERSION

KW - PHASE-MODULATION

KW - ENHANCEMENT

KW - NETWORKS

UR - http://www.scopus.com/inward/record.url?scp=77950937946&partnerID=8YFLogxK

UR - http://dx.doi.org/10.1364/OE.18.007770

U2 - 10.1364/OE.18.007770

DO - 10.1364/OE.18.007770

M3 - Article

SN - 1094-4087

VL - 18

SP - 7770

EP - 7781

JO - Optics Express

JF - Optics Express

IS - 8

ER -

Optical signal processing on a silicon chip at 640Gb/s using slow-light

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

CEC - NOE 004525 PIXNET: ePIXnet

Cite this

Optical signal processing on a silicon chip at 640Gb/s using slow-light

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Projects

CEC - NOE 004525 PIXNET: ePIXnet

Cite this