Optical signal processing on a silicon chip at 640Gb/s using slow-light

B. Corcoran, C. Monat, M. Pelusi, C. Grillet, T. P. White, Liam O'Faolain, T. F. Krauss, B. J. Eggleton, D. J. Moss

Research output: Contribution to journalArticlepeer-review

Abstract

We demonstrate optical performance monitoring of in-band optical signal to noise ratio (OSNR) and residual dispersion, at bit rates of 40Gb/s, 160Gb/s and 640Gb/s, using slow-light enhanced optical third harmonic generation (THG) in a compact (80 mu m) dispersion engineered 2D silicon photonic crystal waveguide. We show that there is no intrinsic degradation in the enhancement of the signal processing at 640Gb/s relative to that at 40Gb/s, and that this device should operate well above 1Tb/s. This work represents a record 16-fold increase in processing speed for a silicon device, and opens the door for slow light to play a key role in ultra-high bandwidth telecommunications systems. (C)2010 Optical Society of America

Original languageEnglish
Pages (from-to)7770-7781
Number of pages12
JournalOptics Express
Volume18
Issue number8
DOIs
Publication statusPublished - 12 Apr 2010

Keywords

  • CRYSTAL WAVE-GUIDES
  • TUNABLE DISPERSION COMPENSATION
  • IN-BAND OSNR
  • 3RD-HARMONIC GENERATION
  • WAVELENGTH CONVERSION
  • PARAMETRIC-AMPLIFIER
  • CHROMATIC DISPERSION
  • PHASE-MODULATION
  • ENHANCEMENT
  • NETWORKS

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