Optical properties of GaSb-based type II quantum wells as the active region of midinfrared interband cascade lasers for gas sensing applications

M. Motyka*, G. Sek, K. Ryczko, J. Misiewicz, T. Lehnhardt, Sven Höfling, A. Forchel

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)

Abstract

Photoreflectance and photoluminescence, supported by the energy level calculations in the eight-band k center dot p model including strain, have been used to study the optical properties of GaSb/AlSb/InAs/InGaSb/AlSb/GaSb type II quantum wells (QWs). The broad emission wavelength tunability in the midinfrared range has been demonstrated by the control of InAs layer thickness. The temperature dependent measurements have shown that the emission can still be efficient at room temperature in such structures, and that the temperature shift of the fundamental type II optical transition between 10 and 300 K can be significantly smaller than for type I QW systems.

Original languageEnglish
Article number251901
Number of pages3
JournalApplied Physics Letters
Volume94
Issue number25
DOIs
Publication statusPublished - 22 Jun 2009

Keywords

  • aluminium compounds
  • gallium compounds
  • gas sensors
  • III-V semiconductors
  • indium compounds
  • k
  • p calculations
  • photoluminescence
  • photoreflectance
  • semiconductor quantum wells
  • CONTINUOUS-WAVE OPERATION
  • SEMICONDUCTORS
  • GAINAS/GAAS
  • TRANSITIONS

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