Optical absorption by dilute GaNSb alloys: Influence of N pair states

J. J. Mudd; N. J. Kybert; W. M. Linhart; L. Buckle; T. Ashley; P. D. C. King; T. S. Jones; M. J. Ashwin; T. D. Veal

doi:10.1063/1.4816519

Optical absorption by dilute GaNSb alloys: Influence of N pair states

J. J. Mudd^*
, N. J. Kybert
, W. M. Linhart
, L. Buckle
, T. Ashley
, P. D. C. King
, T. S. Jones
, M. J. Ashwin
, T. D. Veal

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

The optical properties of GaNSb alloys with N contents of up to 2.5% have been investigated at room temperature using infrared absorption spectroscopy. The evolution of the absorption onsets with N content has been described using a three level band anticrossing model of the N localized states interactions with the GaSb conduction band. This approach includes the effect of N pair states, which is critical to reproduce the observed optical properties. This confirms theoretical predictions that N pair states have a more pronounced effect on the band dispersion in GaNSb than in GaNAs.

Original language	English
Article number	042110
Number of pages	4
Journal	Applied Physics Letters
Volume	103
Issue number	4
DOIs	https://doi.org/10.1063/1.4816519
Publication status	Published - 22 Jul 2013

Keywords

Conduction bands
Band gap
III-V semiconductors
Band models
Absorption spectra
Valence bands

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10.1063/1.4816519

1.4816519
Copyright 2013, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, Vol 103, Issue 4, and may be found at: http://scitation.aip.org/content/aip/journal/apl/103/4/10.1063/1.4816519
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@article{a3897ac815604cb8a226bddd531b5076,

title = "Optical absorption by dilute GaNSb alloys: Influence of N pair states",

abstract = "The optical properties of GaNSb alloys with N contents of up to 2.5\% have been investigated at room temperature using infrared absorption spectroscopy. The evolution of the absorption onsets with N content has been described using a three level band anticrossing model of the N localized states interactions with the GaSb conduction band. This approach includes the effect of N pair states, which is critical to reproduce the observed optical properties. This confirms theoretical predictions that N pair states have a more pronounced effect on the band dispersion in GaNSb than in GaNAs.",

keywords = "Conduction bands, Band gap, III-V semiconductors, Band models, Absorption spectra, Valence bands",

author = "Mudd, \{J. J.\} and Kybert, \{N. J.\} and Linhart, \{W. M.\} and L. Buckle and T. Ashley and King, \{P. D. C.\} and Jones, \{T. S.\} and Ashwin, \{M. J.\} and Veal, \{T. D.\}",

year = "2013",

month = jul,

day = "22",

doi = "10.1063/1.4816519",

language = "English",

volume = "103",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "4",

}

TY - JOUR

T1 - Optical absorption by dilute GaNSb alloys

T2 - Influence of N pair states

AU - Mudd, J. J.

AU - Kybert, N. J.

AU - Linhart, W. M.

AU - Buckle, L.

AU - Ashley, T.

AU - King, P. D. C.

AU - Jones, T. S.

AU - Ashwin, M. J.

AU - Veal, T. D.

PY - 2013/7/22

Y1 - 2013/7/22

N2 - The optical properties of GaNSb alloys with N contents of up to 2.5% have been investigated at room temperature using infrared absorption spectroscopy. The evolution of the absorption onsets with N content has been described using a three level band anticrossing model of the N localized states interactions with the GaSb conduction band. This approach includes the effect of N pair states, which is critical to reproduce the observed optical properties. This confirms theoretical predictions that N pair states have a more pronounced effect on the band dispersion in GaNSb than in GaNAs.

AB - The optical properties of GaNSb alloys with N contents of up to 2.5% have been investigated at room temperature using infrared absorption spectroscopy. The evolution of the absorption onsets with N content has been described using a three level band anticrossing model of the N localized states interactions with the GaSb conduction band. This approach includes the effect of N pair states, which is critical to reproduce the observed optical properties. This confirms theoretical predictions that N pair states have a more pronounced effect on the band dispersion in GaNSb than in GaNAs.

KW - Conduction bands

KW - Band gap

KW - III-V semiconductors

KW - Band models

KW - Absorption spectra

KW - Valence bands

U2 - 10.1063/1.4816519

DO - 10.1063/1.4816519

M3 - Article

SN - 0003-6951

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

M1 - 042110

ER -

Optical absorption by dilute GaNSb alloys: Influence of N pair states

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