Optical absorption by dilute GaNSb alloys: Influence of N pair states

J. J. Mudd*, N. J. Kybert, W. M. Linhart, L. Buckle, T. Ashley, P. D. C. King, T. S. Jones, M. J. Ashwin, T. D. Veal

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)
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Abstract

The optical properties of GaNSb alloys with N contents of up to 2.5% have been investigated at room temperature using infrared absorption spectroscopy. The evolution of the absorption onsets with N content has been described using a three level band anticrossing model of the N localized states interactions with the GaSb conduction band. This approach includes the effect of N pair states, which is critical to reproduce the observed optical properties. This confirms theoretical predictions that N pair states have a more pronounced effect on the band dispersion in GaNSb than in GaNAs.

Original languageEnglish
Article number042110
Number of pages4
JournalApplied Physics Letters
Volume103
Issue number4
DOIs
Publication statusPublished - 22 Jul 2013

Keywords

  • Conduction bands
  • Band gap
  • III-V semiconductors
  • Band models
  • Absorption spectra
  • Valence bands

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