Omnipresence of weak antilocalization (WAL) in Bi2Se3 thin films: a review on its origin

Rubén Gracia-Abad, Soraya Sangiao*, Chiara Bigi, Sandeep Kumar Chaluvadi, Pasquale Orgiani, José María De Teresa*

*Corresponding author for this work

Research output: Contribution to journalReview articlepeer-review

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Abstract

Topological insulators are materials with time-reversal symmetric states of matter in which an insulating bulk is surrounded by protected Dirac-like edge or surface states. Among topological insulators, Bi2Se3 has attracted special attention due to its simple surface band structure and its relatively large band gap that should enhance the contribution of its surface to transport, which is usually masked by the appearance of defects. In order to avoid this difficulty, several features characteristic of topological insulators in the quantum regime, such as the weak-antilocalization effect, can be explored through magnetotransport experiments carried out on thin films of this material. Here, we review the existing literature on the magnetotransport properties of Bi2Se3 thin films, paying thorough attention to the weak-antilocalization effect, which is omnipresent no matter the film quality. We carefully follow the different situations found in reported experiments, from the most ideal situations, with a strong surface contribution, towards more realistic cases where the bulk contribution dominates. We have compared the transport data found in literature to shed light on the intrinsic properties of Bi2Se3, finding a clear relationship between the mobility and the phase coherence length of the films that could trigger further experiments on transport in topological systems.
Original languageEnglish
Article numbere1077
Number of pages20
JournalNanomaterials
Volume11
Issue number5
DOIs
Publication statusPublished - 22 Apr 2021

Keywords

  • Topological insulator
  • Berry’s phase
  • Bi2Se3 film
  • Weak-antilocalization
  • Magnetotransport

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