Observation of shallow-donor muonium in Ga2O3: Evidence for hydrogen-induced conductivity

P. D. C. King, I. McKenzie, T. D. Veal

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59 Citations (Scopus)

Abstract

The electrical nature of muonium in the transparent conducting oxide material Ga2O3 is investigated via muon-spin rotation and relaxation spectroscopy. It is found to be a shallow donor, with an effective donor depth of 15 < E-D < 30 meV and a hyperfine splitting of 0.13 +/- 0.01 MHz. This is in contrast to the deep level observed in the majority of semiconductors but supports the recent suggestion that muonium should be a shallow donor across the class of transparent conducting oxides. These observations suggest that hydrogen will also be a shallow donor in Ga2O3, with important implications both for unintentional conductivity and deliberate n-type doping of this material.

Original languageEnglish
Pages (from-to)062110
Number of pages3
JournalApplied Physics Letters
Volume96
Issue number6
DOIs
Publication statusPublished - 8 Feb 2010

Keywords

  • deep levels
  • gallium compounds
  • hyperfine interactions
  • muon probes
  • muonium
  • ELECTRICAL-ACTIVITY
  • OXIDE MUONICS
  • ZINC-OXIDE
  • BETA-GA2O3
  • CRYSTALS

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