Novel Photonic Crystal Nanocavity Design with high Tolerance to Disorder

Karl Welna; Simone L. Portalupi; Matteo Galli; Liam O'Faolain; Thomas F. Krauss

doi:10.1109/IPCon.2012.6358596

Novel Photonic Crystal Nanocavity Design with high Tolerance to Disorder

Karl Welna^*, Simone L. Portalupi, Matteo Galli, Liam O'Faolain, Thomas F. Krauss

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We propose and experimentally demonstrate a new approach to the design of Photonic Crystal cavities. Rather than simply maximizing the design Q-factor, we take the effects of disorder into account, and develop a design that provides superior Q factors in the presence of disorder relative to existing designs.

Original language	English
Title of host publication	2012 IEEE PHOTONICS CONFERENCE (IPC)
Place of Publication	NEW YORK
Publisher	IEEE
Pages	270-271
Number of pages	2
ISBN (Print)	978-1-4577-0733-9
DOIs	https://doi.org/10.1109/IPCon.2012.6358596
Publication status	Published - 2012
Event	25th IEEE Photonics Conference (IPC) - Burlingame, Canada Duration: 23 Sept 2012 → 27 Sept 2012

Conference

Conference	25th IEEE Photonics Conference (IPC)
Country/Territory	Canada
City	Burlingame
Period	23/09/12 → 27/09/12

Access to Document

10.1109/IPCon.2012.6358596

Lasing of Erbium in Crystalline silicon: Lasing of Erbium in crystalline silicon Photonic Nanostructures - LECSIN
O'Faolain, L. (PI) & Krauss, T. (CoI)
EPSRC
25/02/10 → 24/02/13
Project: Standard
UK Silicon Photonics EP/F001622/1: UK Silicon Photonics
Krauss, T. (PI)
EPSRC
1/06/08 → 31/05/13
Project: Standard
EP/F020589/1 - Monolithic integration: Monolithic integration of optical traps and microfluidic channels
Krauss, T. (PI) & Dholakia, K. (CoI)
EPSRC
3/03/08 → 2/03/12
Project: Standard

Cite this

@inproceedings{78e99365d34944b0bbd43f736f52ce7f,

title = "Novel Photonic Crystal Nanocavity Design with high Tolerance to Disorder",

abstract = "We propose and experimentally demonstrate a new approach to the design of Photonic Crystal cavities. Rather than simply maximizing the design Q-factor, we take the effects of disorder into account, and develop a design that provides superior Q factors in the presence of disorder relative to existing designs.",

author = "Karl Welna and Portalupi, {Simone L.} and Matteo Galli and Liam O'Faolain and Krauss, {Thomas F.}",

year = "2012",

doi = "10.1109/IPCon.2012.6358596",

language = "English",

isbn = "978-1-4577-0733-9",

pages = "270--271",

booktitle = "2012 IEEE PHOTONICS CONFERENCE (IPC)",

publisher = "IEEE",

note = "25th IEEE Photonics Conference (IPC) ; Conference date: 23-09-2012 Through 27-09-2012",

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T1 - Novel Photonic Crystal Nanocavity Design with high Tolerance to Disorder

AU - Welna, Karl

AU - Portalupi, Simone L.

AU - Galli, Matteo

AU - O'Faolain, Liam

AU - Krauss, Thomas F.

PY - 2012

Y1 - 2012

N2 - We propose and experimentally demonstrate a new approach to the design of Photonic Crystal cavities. Rather than simply maximizing the design Q-factor, we take the effects of disorder into account, and develop a design that provides superior Q factors in the presence of disorder relative to existing designs.

AB - We propose and experimentally demonstrate a new approach to the design of Photonic Crystal cavities. Rather than simply maximizing the design Q-factor, we take the effects of disorder into account, and develop a design that provides superior Q factors in the presence of disorder relative to existing designs.

U2 - 10.1109/IPCon.2012.6358596

DO - 10.1109/IPCon.2012.6358596

M3 - Conference contribution

SN - 978-1-4577-0733-9

SP - 270

EP - 271

BT - 2012 IEEE PHOTONICS CONFERENCE (IPC)

PB - IEEE

CY - NEW YORK

T2 - 25th IEEE Photonics Conference (IPC)

Y2 - 23 September 2012 through 27 September 2012

ER -

Novel Photonic Crystal Nanocavity Design with high Tolerance to Disorder

Abstract

Conference

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Projects

Lasing of Erbium in Crystalline silicon: Lasing of Erbium in crystalline silicon Photonic Nanostructures - LECSIN

UK Silicon Photonics EP/F001622/1: UK Silicon Photonics

EP/F020589/1 - Monolithic integration: Monolithic integration of optical traps and microfluidic channels

Cite this