TY - JOUR
T1 - Nonvolatile full adder based on a single multivalued Hall junction
AU - Zhang, SL
AU - Collins-McIntyre, LJ
AU - Zhang, JY
AU - Wang, SG
AU - Yu, GH
AU - Hesjedal, T
PY - 2013/7/1
Y1 - 2013/7/1
N2 - Multivalued logic devices are promising candidates for achieving high-density, low-power memory and logic functionalities. We present a ferromagnetic multilayer Hall junction device with four distinct resistance - and thus logic - states. The states can be encoded as a quaternary bit and decoded into two binary bits. We demonstrate a nonvolatile full adder that is based on a single Hall junction, the extraordinary Hall balance. The device can be easily integrated into complex logic circuits for logic-in-memory architectures.
AB - Multivalued logic devices are promising candidates for achieving high-density, low-power memory and logic functionalities. We present a ferromagnetic multilayer Hall junction device with four distinct resistance - and thus logic - states. The states can be encoded as a quaternary bit and decoded into two binary bits. We demonstrate a nonvolatile full adder that is based on a single Hall junction, the extraordinary Hall balance. The device can be easily integrated into complex logic circuits for logic-in-memory architectures.
UR - http://www.worldscientific.com/worldscinet/spin
U2 - 10.1142/S2010324713500082
DO - 10.1142/S2010324713500082
M3 - Article
JO - SPIN
JF - SPIN
ER -