Nonparabolic coupled Poisson-Schrodinger solutions for quantized electron accumulation layers: Band bending, charge profile, and subbands at InN surfaces

P. D. C. King, T. D. Veal, C. F. McConville

Research output: Contribution to journalArticlepeer-review

81 Citations (Scopus)

Abstract

The one-electron potential, carrier concentration profile, quantized subband state energies, and parallel dispersion relations are calculated for an accumulation layer at a semiconductor surface by solving Poisson's equation within a modified Thomas-Fermi approximation and numerically solving the Schrodinger equation for the resulting potential well. A nonparabolic conduction band, described within the Kane k.p approximation, is incorporated in the model. Example calculations are performed for a typical clean InN surface and for a variety of surface state densities and bulk carrier concentrations. Agreement is found between the model calculations and experimental measurements of the subband energies and dispersions at c-plane InN surfaces from electron tunneling spectroscopy and angle resolved photoemission spectroscopy.

Original languageEnglish
Pages (from-to)125305
Number of pages7
JournalPhysical Review. B, Condensed matter and materials physics
Volume77
Issue number12
DOIs
Publication statusPublished - Mar 2008

Keywords

  • MOLECULAR-BEAM EPITAXY
  • TUNNELING SPECTROSCOPY
  • INVERSION-LAYERS
  • DEPLETION-LAYER
  • MAGNETIC-FIELD
  • INDIUM NITRIDE
  • SEMICONDUCTOR
  • GAAS
  • GAP
  • DEPENDENCE

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