Narrow spectral linewidth from single site-controlled In(Ga)As quantum dots with high uniformity

A. Huggenberger*, S. Heckelmann, C. Schneider, Sven Höfling, S. Reitzenstein, L. Worschech, M. Kamp, A. Forchel

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

60 Citations (Scopus)

Abstract

We present narrow spectral linewidth from single site-controlled In(Ga)As quantum dots (QDs) grown on nanoholes, which were defined by electron beam lithography on a (100) GaAs substrate. The long-range ordering of uncapped QDs is confirmed by electron microscopy whereas the ordering of capped QDs is visualized by atomic force microscopy. We find a small inhomogeneous broadening of 14.4 meV for the ensemble emission of site-controlled QDs with 300 nm lattice period. The photoluminescence from the excitonic transitions of single site-controlled QDs exhibits linewidth values down to 43 mu eV, which is promising for the investigation of pronounced cavity quantum electrodynamic effects in scalable QD-microresonator systems. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3568890]

Original languageEnglish
Article number131104
Number of pages3
JournalApplied Physics Letters
Volume98
Issue number13
DOIs
Publication statusPublished - 28 Mar 2011

Keywords

  • SYSTEM

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