Abstract
We present narrow spectral linewidth from single site-controlled In(Ga)As quantum dots (QDs) grown on nanoholes, which were defined by electron beam lithography on a (100) GaAs substrate. The long-range ordering of uncapped QDs is confirmed by electron microscopy whereas the ordering of capped QDs is visualized by atomic force microscopy. We find a small inhomogeneous broadening of 14.4 meV for the ensemble emission of site-controlled QDs with 300 nm lattice period. The photoluminescence from the excitonic transitions of single site-controlled QDs exhibits linewidth values down to 43 mu eV, which is promising for the investigation of pronounced cavity quantum electrodynamic effects in scalable QD-microresonator systems. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3568890]
Original language | English |
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Article number | 131104 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 98 |
Issue number | 13 |
DOIs | |
Publication status | Published - 28 Mar 2011 |
Keywords
- SYSTEM