Narrow-band anisotropic electronic structure of ReS2

D. Biswas, Alex M. Ganose, R. Yano, J. M. Riley, L. Bawden, O. J. Clark, J. Feng, L. Collins-Mcintyre, M. T. Sajjad, W. Meevasana, T. K. Kim, M. Hoesch, J. E. Rault, T. Sasagawa, David O. Scanlon, P. D. C. King

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We have used angle resolved photoemission spectroscopy to investigate the band structure of ReS2, a transition-metal dichalcogenide semiconductor with a distorted 1T crystal structure. We find a large number of narrow valence bands, which we attribute to the combined influence of the structural distortion and spin-orbit coupling. We further image how this leads to a strong in-plane anisotropy of the electronic structure, with quasi-one-dimensional bands reflecting predominant hopping along zig-zag Re chains. We find that this does not persist up to the top of the valence band, where a more three-dimensional character is recovered with the fundamental band gap located away from the Brillouin zone centre along kz. These experiments are in good agreement with our density-functional theory calculations, shedding new light on the bulk electronic structure of ReS2, and how it can be expected to evolve when thinned to a single layer.
Original languageEnglish
Article number085205
JournalPhysical Review. B, Condensed matter and materials physics
Issue number8
Publication statusPublished - 16 Aug 2017


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