Abstract
Particles with diameters in the 2-10 nm range have been synthesised from the decomposition of InN3(CH2CH2CH2NMe2)(2)] in trioctylphosphine oxide; XPS, EDX and HRTEM studies are consistent with particles of cubic indium nitride. Size fractionated particles with average diameters of 4.5 nm show luminescence at 690 nm (1.82 eV), consistent with the band-gap of the bulk material being near 0.7 eV.
Original language | English |
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Pages (from-to) | 3124-3126 |
Number of pages | 3 |
Journal | Journal of Materials Chemistry |
Volume | 14 |
Issue number | 21 |
DOIs | |
Publication status | Published - 2004 |
Keywords
- INN THIN-FILMS
- INDIUM NITRIDE
- BAND-GAP
- GROWTH
- TEMPERATURE
- PRECURSORS