Nanofabrication of II-VI semiconductor quantum wires and dots

C. M. Sotomayor Torres; A. Ross; Y. S. Tang; A. Ribayrol; S. Thoms; A. S. Bunting; H. P. Zhou; K. Tsutsui; H. McLelland; H. P. Wagner; B. Lunn; D. E. Ashenford

Nanofabrication of II-VI semiconductor quantum wires and dots

C. M. Sotomayor Torres^*, A. Ross, Y. S. Tang, A. Ribayrol, S. Thoms, A. S. Bunting, H. P. Zhou, K. Tsutsui, H. McLelland, H. P. Wagner, B. Lunn, D. E. Ashenford

^*Corresponding author for this work

School of Physics and Astronomy

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We describe the fabrication process to make wires and dots down to 30 nm of lateral dimensions, reaching 20 nm in special circumstances. A combination of electron beam lithography and dry etching using a mixture of methane and hydrogen was used. Low temperature photoluminescence and room temperature photoreflectance have been used to characterise the fabrication process and to gain an insight into confinement effects in CdMnTe-CdTe quantum dots. These observations are interpreted in terms of a combination of strain change, and centre of mass exciton quantization. In ZnTe/ZnSe waveguide structures a process to pattern gratings has been also developed.

Original language	English
Title of host publication	University of Glasgow
Pages	87-92
Number of pages	6
Volume	182-184
Publication status	Published - 1 Jan 1995
Event	Proceedings of the 3rd European Workshop on II-VI Compounds - Linz, Austria Duration: 26 Sept 1994 → 28 Sept 1994

Publication series

Name	Materials Science Forum
ISSN (Print)	0255-5476

Conference

Conference	Proceedings of the 3rd European Workshop on II-VI Compounds
City	Linz, Austria
Period	26/09/94 → 28/09/94

Cite this

@inproceedings{86e19626d8c845b4b57e6d7469f32750,

title = "Nanofabrication of II-VI semiconductor quantum wires and dots",

abstract = "We describe the fabrication process to make wires and dots down to 30 nm of lateral dimensions, reaching 20 nm in special circumstances. A combination of electron beam lithography and dry etching using a mixture of methane and hydrogen was used. Low temperature photoluminescence and room temperature photoreflectance have been used to characterise the fabrication process and to gain an insight into confinement effects in CdMnTe-CdTe quantum dots. These observations are interpreted in terms of a combination of strain change, and centre of mass exciton quantization. In ZnTe/ZnSe waveguide structures a process to pattern gratings has been also developed.",

author = "{Sotomayor Torres}, {C. M.} and A. Ross and Tang, {Y. S.} and A. Ribayrol and S. Thoms and Bunting, {A. S.} and Zhou, {H. P.} and K. Tsutsui and H. McLelland and Wagner, {H. P.} and B. Lunn and Ashenford, {D. E.}",

year = "1995",

month = jan,

day = "1",

language = "English",

volume = "182-184",

series = "Materials Science Forum",

pages = "87--92",

booktitle = "University of Glasgow",

note = "Proceedings of the 3rd European Workshop on II-VI Compounds ; Conference date: 26-09-1994 Through 28-09-1994",

}

Sotomayor Torres, CM, Ross, A, Tang, YS, Ribayrol, A, Thoms, S, Bunting, AS, Zhou, HP, Tsutsui, K, McLelland, H, Wagner, HP, Lunn, B & Ashenford, DE 1995, Nanofabrication of II-VI semiconductor quantum wires and dots. in University of Glasgow. vol. 182-184, Materials Science Forum, pp. 87-92, Proceedings of the 3rd European Workshop on II-VI Compounds, Linz, Austria, 26/09/94.

TY - GEN

T1 - Nanofabrication of II-VI semiconductor quantum wires and dots

AU - Sotomayor Torres, C. M.

AU - Ross, A.

AU - Tang, Y. S.

AU - Ribayrol, A.

AU - Thoms, S.

AU - Bunting, A. S.

AU - Zhou, H. P.

AU - Tsutsui, K.

AU - McLelland, H.

AU - Wagner, H. P.

AU - Lunn, B.

AU - Ashenford, D. E.

PY - 1995/1/1

Y1 - 1995/1/1

N2 - We describe the fabrication process to make wires and dots down to 30 nm of lateral dimensions, reaching 20 nm in special circumstances. A combination of electron beam lithography and dry etching using a mixture of methane and hydrogen was used. Low temperature photoluminescence and room temperature photoreflectance have been used to characterise the fabrication process and to gain an insight into confinement effects in CdMnTe-CdTe quantum dots. These observations are interpreted in terms of a combination of strain change, and centre of mass exciton quantization. In ZnTe/ZnSe waveguide structures a process to pattern gratings has been also developed.

AB - We describe the fabrication process to make wires and dots down to 30 nm of lateral dimensions, reaching 20 nm in special circumstances. A combination of electron beam lithography and dry etching using a mixture of methane and hydrogen was used. Low temperature photoluminescence and room temperature photoreflectance have been used to characterise the fabrication process and to gain an insight into confinement effects in CdMnTe-CdTe quantum dots. These observations are interpreted in terms of a combination of strain change, and centre of mass exciton quantization. In ZnTe/ZnSe waveguide structures a process to pattern gratings has been also developed.

UR - http://www.scopus.com/inward/record.url?scp=0029227843&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0029227843

VL - 182-184

T3 - Materials Science Forum

SP - 87

EP - 92

BT - University of Glasgow

T2 - Proceedings of the 3rd European Workshop on II-VI Compounds

Y2 - 26 September 1994 through 28 September 1994

ER -

Nanofabrication of II-VI semiconductor quantum wires and dots

Abstract

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