Monolithically integrated logic NOR gate based on GaAs/AlGaAs three-terminal junctions

C. R. Mueller; L. Worschech; P. Hoepfner; Sven Hofling; A. Forchel

doi:10.1109/LED.2007.906108

Monolithically integrated logic NOR gate based on GaAs/AlGaAs three-terminal junctions

C. R. Mueller^*, L. Worschech, P. Hoepfner, Sven Hofling, A. Forchel

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Room-temperature operation of a logic NOR gate is demonstrated. The NOR gate is based on three three-terminal junctions (TTJs) monolithically integrated in a modulation-doped GaAs/AlGaAs heterostructure without any external load resistance. For the logic NOR gate, one of the TTJs serves as load transistor, whereas the other two are used as inputs. Each TTJ has a 90-nm-wide channel and shows clear transistor characteristics with drain currents up to 10 mu A for a drain voltage of 1 V. Furthermore, voltage amplification is demonstrated for the logic NOR-gate function.

Original language	English
Pages (from-to)	859-861
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	28
Issue number	10
DOIs	https://doi.org/10.1109/LED.2007.906108
Publication status	Published - Oct 2007

Keywords

integrated circuit
logic NOR gate
three-terminal junction (TTJs)
ROOM-TEMPERATURE

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10.1109/LED.2007.906108

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title = "Monolithically integrated logic NOR gate based on GaAs/AlGaAs three-terminal junctions",

abstract = "Room-temperature operation of a logic NOR gate is demonstrated. The NOR gate is based on three three-terminal junctions (TTJs) monolithically integrated in a modulation-doped GaAs/AlGaAs heterostructure without any external load resistance. For the logic NOR gate, one of the TTJs serves as load transistor, whereas the other two are used as inputs. Each TTJ has a 90-nm-wide channel and shows clear transistor characteristics with drain currents up to 10 mu A for a drain voltage of 1 V. Furthermore, voltage amplification is demonstrated for the logic NOR-gate function.",

keywords = "integrated circuit, logic NOR gate, three-terminal junction (TTJs), ROOM-TEMPERATURE",

author = "Mueller, {C. R.} and L. Worschech and P. Hoepfner and Sven Hofling and A. Forchel",

year = "2007",

month = oct,

doi = "10.1109/LED.2007.906108",

language = "English",

volume = "28",

pages = "859--861",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - Monolithically integrated logic NOR gate based on GaAs/AlGaAs three-terminal junctions

AU - Mueller, C. R.

AU - Worschech, L.

AU - Hoepfner, P.

AU - Hofling, Sven

AU - Forchel, A.

PY - 2007/10

Y1 - 2007/10

N2 - Room-temperature operation of a logic NOR gate is demonstrated. The NOR gate is based on three three-terminal junctions (TTJs) monolithically integrated in a modulation-doped GaAs/AlGaAs heterostructure without any external load resistance. For the logic NOR gate, one of the TTJs serves as load transistor, whereas the other two are used as inputs. Each TTJ has a 90-nm-wide channel and shows clear transistor characteristics with drain currents up to 10 mu A for a drain voltage of 1 V. Furthermore, voltage amplification is demonstrated for the logic NOR-gate function.

AB - Room-temperature operation of a logic NOR gate is demonstrated. The NOR gate is based on three three-terminal junctions (TTJs) monolithically integrated in a modulation-doped GaAs/AlGaAs heterostructure without any external load resistance. For the logic NOR gate, one of the TTJs serves as load transistor, whereas the other two are used as inputs. Each TTJ has a 90-nm-wide channel and shows clear transistor characteristics with drain currents up to 10 mu A for a drain voltage of 1 V. Furthermore, voltage amplification is demonstrated for the logic NOR-gate function.

KW - integrated circuit

KW - logic NOR gate

KW - three-terminal junction (TTJs)

KW - ROOM-TEMPERATURE

U2 - 10.1109/LED.2007.906108

DO - 10.1109/LED.2007.906108

M3 - Article

SN - 0741-3106

VL - 28

SP - 859

EP - 861

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 10

ER -

Monolithically integrated logic NOR gate based on GaAs/AlGaAs three-terminal junctions

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Keywords

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