Monolithically integrated logic NOR gate based on GaAs/AlGaAs three-terminal junctions

C. R. Mueller*, L. Worschech, P. Hoepfner, Sven Hofling, A. Forchel

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

27 Citations (Scopus)

Abstract

Room-temperature operation of a logic NOR gate is demonstrated. The NOR gate is based on three three-terminal junctions (TTJs) monolithically integrated in a modulation-doped GaAs/AlGaAs heterostructure without any external load resistance. For the logic NOR gate, one of the TTJs serves as load transistor, whereas the other two are used as inputs. Each TTJ has a 90-nm-wide channel and shows clear transistor characteristics with drain currents up to 10 mu A for a drain voltage of 1 V. Furthermore, voltage amplification is demonstrated for the logic NOR-gate function.

Original languageEnglish
Pages (from-to)859-861
Number of pages3
JournalIEEE Electron Device Letters
Volume28
Issue number10
DOIs
Publication statusPublished - Oct 2007

Keywords

  • integrated circuit
  • logic NOR gate
  • three-terminal junction (TTJs)
  • ROOM-TEMPERATURE

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