Modulation Bandwidth and Linewidth Enhancement Factor of High-Speed 1.55-mu m Quantum-Dash Lasers

Sebastian Hein; Sven Höfling; Alfred Forchel

doi:10.1109/LPT.2009.2014076

Modulation Bandwidth and Linewidth Enhancement Factor of High-Speed 1.55-mu m Quantum-Dash Lasers

Sebastian Hein^*, Sven Höfling, Alfred Forchel

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

InAs-InGaAlAs-InP quantum-dash lasers have been fabricated showing continuous-wave operation up to 100 degrees C with a characteristic temperature of 88 K between 25 degrees C and 85 degrees C and output powers above 27 mW at room temperature (RT). The small-signal modulation bandwidth of 10 GHz at RT amounts still to 4 GHz at 85 degrees C. The linewidth enhancement factor above threshold is evaluated by means of the frequency-modulation/amplitude-modulation method in dependence on modulation frequency and drive current, exhibiting a value of 2.5 slightly above threshold.

Original language	English
Pages (from-to)	528-530
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	21
Issue number	8
DOIs	https://doi.org/10.1109/LPT.2009.2014076
Publication status	Published - 15 Apr 2009

Keywords

Henry factor
linewidth enhancement factor (LEF)
modulation bandwidth
quantum dash (QDash)
quantum-dash laser
quantum dot (QD)
1.55 MU-M
DOT LASERS
SEMICONDUCTOR-LASERS

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title = "Modulation Bandwidth and Linewidth Enhancement Factor of High-Speed 1.55-mu m Quantum-Dash Lasers",

abstract = "InAs-InGaAlAs-InP quantum-dash lasers have been fabricated showing continuous-wave operation up to 100 degrees C with a characteristic temperature of 88 K between 25 degrees C and 85 degrees C and output powers above 27 mW at room temperature (RT). The small-signal modulation bandwidth of 10 GHz at RT amounts still to 4 GHz at 85 degrees C. The linewidth enhancement factor above threshold is evaluated by means of the frequency-modulation/amplitude-modulation method in dependence on modulation frequency and drive current, exhibiting a value of 2.5 slightly above threshold.",

keywords = "Henry factor, linewidth enhancement factor (LEF), modulation bandwidth, quantum dash (QDash), quantum-dash laser, quantum dot (QD), 1.55 MU-M, DOT LASERS, SEMICONDUCTOR-LASERS",

author = "Sebastian Hein and Sven H{\"o}fling and Alfred Forchel",

year = "2009",

month = apr,

day = "15",

doi = "10.1109/LPT.2009.2014076",

language = "English",

volume = "21",

pages = "528--530",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "8",

}

TY - JOUR

T1 - Modulation Bandwidth and Linewidth Enhancement Factor of High-Speed 1.55-mu m Quantum-Dash Lasers

AU - Hein, Sebastian

AU - Höfling, Sven

AU - Forchel, Alfred

PY - 2009/4/15

Y1 - 2009/4/15

N2 - InAs-InGaAlAs-InP quantum-dash lasers have been fabricated showing continuous-wave operation up to 100 degrees C with a characteristic temperature of 88 K between 25 degrees C and 85 degrees C and output powers above 27 mW at room temperature (RT). The small-signal modulation bandwidth of 10 GHz at RT amounts still to 4 GHz at 85 degrees C. The linewidth enhancement factor above threshold is evaluated by means of the frequency-modulation/amplitude-modulation method in dependence on modulation frequency and drive current, exhibiting a value of 2.5 slightly above threshold.

AB - InAs-InGaAlAs-InP quantum-dash lasers have been fabricated showing continuous-wave operation up to 100 degrees C with a characteristic temperature of 88 K between 25 degrees C and 85 degrees C and output powers above 27 mW at room temperature (RT). The small-signal modulation bandwidth of 10 GHz at RT amounts still to 4 GHz at 85 degrees C. The linewidth enhancement factor above threshold is evaluated by means of the frequency-modulation/amplitude-modulation method in dependence on modulation frequency and drive current, exhibiting a value of 2.5 slightly above threshold.

KW - Henry factor

KW - linewidth enhancement factor (LEF)

KW - modulation bandwidth

KW - quantum dash (QDash)

KW - quantum-dash laser

KW - quantum dot (QD)

KW - 1.55 MU-M

KW - DOT LASERS

KW - SEMICONDUCTOR-LASERS

U2 - 10.1109/LPT.2009.2014076

DO - 10.1109/LPT.2009.2014076

M3 - Article

SN - 1041-1135

VL - 21

SP - 528

EP - 530

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 8

ER -

Modulation Bandwidth and Linewidth Enhancement Factor of High-Speed 1.55-mu m Quantum-Dash Lasers

Abstract

Keywords

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