Modal gain and its diameter dependence in single-ZnO micro- and nanowires

J. P. Richters*, J. Kalden, M. Gnauck, C. Ronning, C. P. Dietrich, H. von Wenckstern, M. Grundmann, J. Gutowski, T. Voss

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

Nanowires can successfully be used as building blocks for nanoscaled laser devices. Calculations predict an extremely large modal gain for nanowires made up of semiconductors such as GaN or ZnO. We determine experimentally the modal gain of single-ZnO nano-and microwires to approach 5000 cm(-1) under particular size conditions. We demonstrate the distinct and sensitive dependence of the modal gain on the wire diameter and discuss optimizations for lasing of these wires.

Original languageEnglish
Article number015005
Number of pages5
JournalSemiconductor Science and Technology
Volume27
Issue number1
DOIs
Publication statusPublished - Jan 2012

Keywords

  • SEMICONDUCTOR NANOWIRE
  • ROOM-TEMPERATURE
  • OPTICAL GAIN
  • MODES
  • EMISSION
  • GROWTH

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