Modal gain and its diameter dependence in single-ZnO micro- and nanowires

J. P. Richters; J. Kalden; M. Gnauck; C. Ronning; C. P. Dietrich; H. von Wenckstern; M. Grundmann; J. Gutowski; T. Voss

doi:10.1088/0268-1242/27/1/015005

Modal gain and its diameter dependence in single-ZnO micro- and nanowires

J. P. Richters^*, J. Kalden, M. Gnauck, C. Ronning, C. P. Dietrich, H. von Wenckstern, M. Grundmann, J. Gutowski, T. Voss

^*Corresponding author for this work

School of Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

Abstract

Nanowires can successfully be used as building blocks for nanoscaled laser devices. Calculations predict an extremely large modal gain for nanowires made up of semiconductors such as GaN or ZnO. We determine experimentally the modal gain of single-ZnO nano-and microwires to approach 5000 cm(-1) under particular size conditions. We demonstrate the distinct and sensitive dependence of the modal gain on the wire diameter and discuss optimizations for lasing of these wires.

Original language	English
Article number	015005
Number of pages	5
Journal	Semiconductor Science and Technology
Volume	27
Issue number	1
DOIs	https://doi.org/10.1088/0268-1242/27/1/015005
Publication status	Published - Jan 2012

Keywords

SEMICONDUCTOR NANOWIRE
ROOM-TEMPERATURE
OPTICAL GAIN
MODES
EMISSION
GROWTH

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10.1088/0268-1242/27/1/015005

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title = "Modal gain and its diameter dependence in single-ZnO micro- and nanowires",

abstract = "Nanowires can successfully be used as building blocks for nanoscaled laser devices. Calculations predict an extremely large modal gain for nanowires made up of semiconductors such as GaN or ZnO. We determine experimentally the modal gain of single-ZnO nano-and microwires to approach 5000 cm(-1) under particular size conditions. We demonstrate the distinct and sensitive dependence of the modal gain on the wire diameter and discuss optimizations for lasing of these wires.",

keywords = "SEMICONDUCTOR NANOWIRE, ROOM-TEMPERATURE, OPTICAL GAIN, MODES, EMISSION, GROWTH",

author = "Richters, {J. P.} and J. Kalden and M. Gnauck and C. Ronning and Dietrich, {C. P.} and {von Wenckstern}, H. and M. Grundmann and J. Gutowski and T. Voss",

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doi = "10.1088/0268-1242/27/1/015005",

language = "English",

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TY - JOUR

T1 - Modal gain and its diameter dependence in single-ZnO micro- and nanowires

AU - Richters, J. P.

AU - Kalden, J.

AU - Gnauck, M.

AU - Ronning, C.

AU - Dietrich, C. P.

AU - von Wenckstern, H.

AU - Grundmann, M.

AU - Gutowski, J.

AU - Voss, T.

PY - 2012/1

Y1 - 2012/1

N2 - Nanowires can successfully be used as building blocks for nanoscaled laser devices. Calculations predict an extremely large modal gain for nanowires made up of semiconductors such as GaN or ZnO. We determine experimentally the modal gain of single-ZnO nano-and microwires to approach 5000 cm(-1) under particular size conditions. We demonstrate the distinct and sensitive dependence of the modal gain on the wire diameter and discuss optimizations for lasing of these wires.

AB - Nanowires can successfully be used as building blocks for nanoscaled laser devices. Calculations predict an extremely large modal gain for nanowires made up of semiconductors such as GaN or ZnO. We determine experimentally the modal gain of single-ZnO nano-and microwires to approach 5000 cm(-1) under particular size conditions. We demonstrate the distinct and sensitive dependence of the modal gain on the wire diameter and discuss optimizations for lasing of these wires.

KW - SEMICONDUCTOR NANOWIRE

KW - ROOM-TEMPERATURE

KW - OPTICAL GAIN

KW - MODES

KW - EMISSION

KW - GROWTH

U2 - 10.1088/0268-1242/27/1/015005

DO - 10.1088/0268-1242/27/1/015005

M3 - Article

SN - 0268-1242

VL - 27

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 1

M1 - 015005

ER -

Modal gain and its diameter dependence in single-ZnO micro- and nanowires

Abstract

Keywords

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