Abstract
We present ICLEDs emitting at peak wavelengths of around 3.7 µm. A record efficiency was achieved by growing the epitaxial structures on low doped substrates and positioning the active stages at antinodes of the optical field.
| Original language | English |
|---|---|
| Pages | STh4L.5 |
| DOIs | |
| Publication status | Published - May 2020 |
| Event | Conference on Lasers and Electro-Optics - Duration: 10 May 2020 → 15 May 2020 |
Conference
| Conference | Conference on Lasers and Electro-Optics |
|---|---|
| Period | 10/05/20 → 15/05/20 |
Keywords
- Constructive interference
- Destructive interference
- Electric fields
- Emission
- Physical vapor deposition
- Total internal reflection
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