Mid-infrared GaSb-based resonant tunneling diode photodetectors for gas sensing applications

F Rothmayr, A Pfenning, C Kistner, J Koeth, G Knebl, A Schade, S Krueger, l Worschech, F Hartmann, Sven Höfling

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)

Abstract

We present resonant tunneling diode-photodetectors (RTD-PDs) with GaAs0.15Sb0.85/AlAs0.1Sb0.9 double barrier structures combined with an additional quaternary Ga0.64In0.36As0.33Sb0.67 absorption layer covering the fingerprint absorption lines of various gases in the mid-infrared wavelength spectral region. The absorption layer cut-off wavelength is determined to be 3.5 µm and the RTD-PDs show peak-to-valley current ratios up to 4.3 with peak current densities of 12 A/cm-2.The incorporation of the quaternary absorption layer enables the RTD-PD to be sensitive to illumination with light up to the absorption lines of HCl at 3395 nm. At this wavelength, the detector shows a responsivity of 6.3 mA/W. At the absorption lines of CO2 and CO at 2004 nm and 2330 nm respectively, the RTD-PD reaches responsivities up to 0.97 A/W. Thus RTD-PDs pave the way towards high sensitive mid-infrared detectors that can be utilized in tunable laser absorption spectroscopy.
Original languageEnglish
Article number161107
Number of pages5
JournalApplied Physics Letters
Volume112
Issue number16
Early online date20 Apr 2018
DOIs
Publication statusPublished - Apr 2018

Fingerprint

Dive into the research topics of 'Mid-infrared GaSb-based resonant tunneling diode photodetectors for gas sensing applications'. Together they form a unique fingerprint.

Cite this