Microwire (Mg,Zn)O/ZnO and (Mg,Zn)O/(Cd,Zn)O non-polar quantum well heterostructures for cavity applications

C. P. Dietrich; M. Lange; M. Stoelzel; M. Grundmann

doi:10.1063/1.3678594

Microwire (Mg,Zn)O/ZnO and (Mg,Zn)O/(Cd,Zn)O non-polar quantum well heterostructures for cavity applications

C. P. Dietrich^*, M. Lange, M. Stoelzel, M. Grundmann

^*Corresponding author for this work

School of Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

Abstract

Pulsed-laser deposited, non-polar MgxZn1-xO/ZnO and MgxZn1-xO/Zn1-yCdyO quantum well heterostructures were fabricated in radial direction on ZnO microwires with well-defined hexagonal cross section. Optical resonances modulate room-temperature luminescence spectra for all fabricated heterostructures demonstrating their applicability as microcavities. Quantum confinement was proven by time-integrated and time-resolved luminescence. The ZnO quantum well emission was tuned between 3.76 and 3.35eV by adjusting the well thickness and barrier composition. In order to further reduce the QW emission energy, active Zn1-yCdyO quantum wells in MgxZn1-xO barriers were grown emitting between 3.07 and 2.70eV for different well thicknesses but fixed barrier composition. (C) 2012 American Institute of Physics. [doi:10.1063/1.3678594]

Original language	English
Article number	031110
Number of pages	4
Journal	Applied Physics Letters
Volume	100
Issue number	3
DOIs	https://doi.org/10.1063/1.3678594
Publication status	Published - 16 Jan 2012

Keywords

LASERS

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10.1063/1.3678594

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title = "Microwire (Mg,Zn)O/ZnO and (Mg,Zn)O/(Cd,Zn)O non-polar quantum well heterostructures for cavity applications",

abstract = "Pulsed-laser deposited, non-polar MgxZn1-xO/ZnO and MgxZn1-xO/Zn1-yCdyO quantum well heterostructures were fabricated in radial direction on ZnO microwires with well-defined hexagonal cross section. Optical resonances modulate room-temperature luminescence spectra for all fabricated heterostructures demonstrating their applicability as microcavities. Quantum confinement was proven by time-integrated and time-resolved luminescence. The ZnO quantum well emission was tuned between 3.76 and 3.35eV by adjusting the well thickness and barrier composition. In order to further reduce the QW emission energy, active Zn1-yCdyO quantum wells in MgxZn1-xO barriers were grown emitting between 3.07 and 2.70eV for different well thicknesses but fixed barrier composition. (C) 2012 American Institute of Physics. [doi:10.1063/1.3678594]",

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author = "Dietrich, {C. P.} and M. Lange and M. Stoelzel and M. Grundmann",

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T1 - Microwire (Mg,Zn)O/ZnO and (Mg,Zn)O/(Cd,Zn)O non-polar quantum well heterostructures for cavity applications

AU - Dietrich, C. P.

AU - Lange, M.

AU - Stoelzel, M.

AU - Grundmann, M.

PY - 2012/1/16

Y1 - 2012/1/16

N2 - Pulsed-laser deposited, non-polar MgxZn1-xO/ZnO and MgxZn1-xO/Zn1-yCdyO quantum well heterostructures were fabricated in radial direction on ZnO microwires with well-defined hexagonal cross section. Optical resonances modulate room-temperature luminescence spectra for all fabricated heterostructures demonstrating their applicability as microcavities. Quantum confinement was proven by time-integrated and time-resolved luminescence. The ZnO quantum well emission was tuned between 3.76 and 3.35eV by adjusting the well thickness and barrier composition. In order to further reduce the QW emission energy, active Zn1-yCdyO quantum wells in MgxZn1-xO barriers were grown emitting between 3.07 and 2.70eV for different well thicknesses but fixed barrier composition. (C) 2012 American Institute of Physics. [doi:10.1063/1.3678594]

AB - Pulsed-laser deposited, non-polar MgxZn1-xO/ZnO and MgxZn1-xO/Zn1-yCdyO quantum well heterostructures were fabricated in radial direction on ZnO microwires with well-defined hexagonal cross section. Optical resonances modulate room-temperature luminescence spectra for all fabricated heterostructures demonstrating their applicability as microcavities. Quantum confinement was proven by time-integrated and time-resolved luminescence. The ZnO quantum well emission was tuned between 3.76 and 3.35eV by adjusting the well thickness and barrier composition. In order to further reduce the QW emission energy, active Zn1-yCdyO quantum wells in MgxZn1-xO barriers were grown emitting between 3.07 and 2.70eV for different well thicknesses but fixed barrier composition. (C) 2012 American Institute of Physics. [doi:10.1063/1.3678594]

KW - LASERS

U2 - 10.1063/1.3678594

DO - 10.1063/1.3678594

M3 - Article

SN - 0003-6951

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

M1 - 031110

ER -

Microwire (Mg,Zn)O/ZnO and (Mg,Zn)O/(Cd,Zn)O non-polar quantum well heterostructures for cavity applications

Abstract

Keywords

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