Microsecond carrier lifetimes in InGaAsP quantum wells emtting at λ=1.5μm

JM Smith, GS Buller, D Marshall, Alan Miller, CC Button

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Time-resolved photoluminescence measurements of an undoped InGaAsP multiple-quantum-well heterostructure at excess carrier densities between 10(14) and 10(16) cm(-3) reveal unexpectedly long carrier lifetimes, in excess of 2 mus. By fitting the appropriate rate equation parameters to our results, we establish that radiative recombination is the dominant relaxation process, and show that nonradiative recombination is much less pronounced than in similar quantum-well structures measured previously. (C) 2002 American Institute of Physics.

Original languageEnglish
Pages (from-to)1870-1872
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number11
DOIs
Publication statusPublished - 18 Mar 2002

Keywords

  • TIME-RESOLVED PHOTOLUMINESCENCE
  • 1.3-MU-M INGAASP
  • RECOMBINATION

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