Microsecond carrier lifetimes in InGaAsP quantum wells emtting at λ=1.5μm

JM Smith; GS Buller; D Marshall; Alan Miller; CC Button

doi:10.1063/1.1459490

Microsecond carrier lifetimes in InGaAsP quantum wells emtting at λ=1.5μm

JM Smith, GS Buller, D Marshall, Alan Miller, CC Button

School of Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

Abstract

Time-resolved photoluminescence measurements of an undoped InGaAsP multiple-quantum-well heterostructure at excess carrier densities between 10(14) and 10(16) cm(-3) reveal unexpectedly long carrier lifetimes, in excess of 2 mus. By fitting the appropriate rate equation parameters to our results, we establish that radiative recombination is the dominant relaxation process, and show that nonradiative recombination is much less pronounced than in similar quantum-well structures measured previously. (C) 2002 American Institute of Physics.

Original language	English
Pages (from-to)	1870-1872
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	11
DOIs	https://doi.org/10.1063/1.1459490
Publication status	Published - 18 Mar 2002

Keywords

TIME-RESOLVED PHOTOLUMINESCENCE
1.3-MU-M INGAASP
RECOMBINATION

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10.1063/1.1459490

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abstract = "Time-resolved photoluminescence measurements of an undoped InGaAsP multiple-quantum-well heterostructure at excess carrier densities between 10(14) and 10(16) cm(-3) reveal unexpectedly long carrier lifetimes, in excess of 2 mus. By fitting the appropriate rate equation parameters to our results, we establish that radiative recombination is the dominant relaxation process, and show that nonradiative recombination is much less pronounced than in similar quantum-well structures measured previously. (C) 2002 American Institute of Physics.",

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AU - Miller, Alan

AU - Button, CC

PY - 2002/3/18

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AB - Time-resolved photoluminescence measurements of an undoped InGaAsP multiple-quantum-well heterostructure at excess carrier densities between 10(14) and 10(16) cm(-3) reveal unexpectedly long carrier lifetimes, in excess of 2 mus. By fitting the appropriate rate equation parameters to our results, we establish that radiative recombination is the dominant relaxation process, and show that nonradiative recombination is much less pronounced than in similar quantum-well structures measured previously. (C) 2002 American Institute of Physics.

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KW - 1.3-MU-M INGAASP

KW - RECOMBINATION

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Microsecond carrier lifetimes in InGaAsP quantum wells emtting at λ=1.5μm

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Keywords

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