Microscopic Origin of Electron Accumulation in In2O3

K. H. L. Zhang, R. G. Egdell*, F. Offi, S. Iacobucci, L. Petaccia, S. Gorovikov, P. D. C. King

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

81 Citations (Scopus)

Abstract

Angle-resolved photoemission spectroscopy reveals the presence of a two-dimensional electron gas at the surface of In2O3(111). Quantized subband states arise within a confining potential well associated with surface electron accumulation. Coupled Poisson-Schrodinger calculations suggest that downward band bending for the conduction band must be much bigger than band bending in the valence band. Surface oxygen vacancies acting as doubly ionized shallow donors are shown to provide the free electrons within this accumulation layer. Identification of the origin of electron accumulation in transparent conducting oxides has significant implications in the realization of devices based on these compounds.

Original languageEnglish
Article number056803
Number of pages5
JournalPhysical Review Letters
Volume110
Issue number5
DOIs
Publication statusPublished - 30 Jan 2013

Keywords

  • TRANSPARENT
  • SURFACE
  • OXIDES
  • FILMS

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