Microscopic Origin of Electron Accumulation in In2O3

K. H. L. Zhang; R. G. Egdell; F. Offi; S. Iacobucci; L. Petaccia; S. Gorovikov; P. D. C. King

doi:10.1103/PhysRevLett.110.056803

Microscopic Origin of Electron Accumulation in In₂O₃

K. H. L. Zhang, R. G. Egdell^*, F. Offi, S. Iacobucci, L. Petaccia, S. Gorovikov, P. D. C. King

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Angle-resolved photoemission spectroscopy reveals the presence of a two-dimensional electron gas at the surface of In2O3(111). Quantized subband states arise within a confining potential well associated with surface electron accumulation. Coupled Poisson-Schrodinger calculations suggest that downward band bending for the conduction band must be much bigger than band bending in the valence band. Surface oxygen vacancies acting as doubly ionized shallow donors are shown to provide the free electrons within this accumulation layer. Identification of the origin of electron accumulation in transparent conducting oxides has significant implications in the realization of devices based on these compounds.

Original language	English
Article number	056803
Number of pages	5
Journal	Physical Review Letters
Volume	110
Issue number	5
DOIs	https://doi.org/10.1103/PhysRevLett.110.056803
Publication status	Published - 30 Jan 2013

Keywords

TRANSPARENT
SURFACE
OXIDES
FILMS

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10.1103/PhysRevLett.110.056803

Topological Protection and NonEquilibriu: Topological Protection and NonEquilibrium States in Strongly Correlated Electron Systems
Wahl, P. (PI), Baumberger, F. (CoI), Davis, J. C. (CoI), Green, A. (CoI), Hooley, C. (CoI), Keeling, J. M. J. (CoI) & Mackenzie, A. (CoI)
EPSRC
1/09/11 → 31/08/17
Project: Standard

Cite this

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title = "Microscopic Origin of Electron Accumulation in In2O3",

abstract = "Angle-resolved photoemission spectroscopy reveals the presence of a two-dimensional electron gas at the surface of In2O3(111). Quantized subband states arise within a confining potential well associated with surface electron accumulation. Coupled Poisson-Schrodinger calculations suggest that downward band bending for the conduction band must be much bigger than band bending in the valence band. Surface oxygen vacancies acting as doubly ionized shallow donors are shown to provide the free electrons within this accumulation layer. Identification of the origin of electron accumulation in transparent conducting oxides has significant implications in the realization of devices based on these compounds.",

keywords = "TRANSPARENT, SURFACE, OXIDES, FILMS",

author = "Zhang, {K. H. L.} and Egdell, {R. G.} and F. Offi and S. Iacobucci and L. Petaccia and S. Gorovikov and King, {P. D. C.}",

year = "2013",

month = jan,

day = "30",

doi = "10.1103/PhysRevLett.110.056803",

language = "English",

volume = "110",

journal = "Physical Review Letters",

issn = "0031-9007",

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T1 - Microscopic Origin of Electron Accumulation in In2O3

AU - Zhang, K. H. L.

AU - Egdell, R. G.

AU - Offi, F.

AU - Iacobucci, S.

AU - Petaccia, L.

AU - Gorovikov, S.

AU - King, P. D. C.

PY - 2013/1/30

Y1 - 2013/1/30

N2 - Angle-resolved photoemission spectroscopy reveals the presence of a two-dimensional electron gas at the surface of In2O3(111). Quantized subband states arise within a confining potential well associated with surface electron accumulation. Coupled Poisson-Schrodinger calculations suggest that downward band bending for the conduction band must be much bigger than band bending in the valence band. Surface oxygen vacancies acting as doubly ionized shallow donors are shown to provide the free electrons within this accumulation layer. Identification of the origin of electron accumulation in transparent conducting oxides has significant implications in the realization of devices based on these compounds.

AB - Angle-resolved photoemission spectroscopy reveals the presence of a two-dimensional electron gas at the surface of In2O3(111). Quantized subband states arise within a confining potential well associated with surface electron accumulation. Coupled Poisson-Schrodinger calculations suggest that downward band bending for the conduction band must be much bigger than band bending in the valence band. Surface oxygen vacancies acting as doubly ionized shallow donors are shown to provide the free electrons within this accumulation layer. Identification of the origin of electron accumulation in transparent conducting oxides has significant implications in the realization of devices based on these compounds.

KW - TRANSPARENT

KW - SURFACE

KW - OXIDES

KW - FILMS

U2 - 10.1103/PhysRevLett.110.056803

DO - 10.1103/PhysRevLett.110.056803

M3 - Article

SN - 0031-9007

VL - 110

JO - Physical Review Letters

JF - Physical Review Letters

IS - 5

M1 - 056803

ER -

Microscopic Origin of Electron Accumulation in In2O3

Abstract

Keywords

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Topological Protection and NonEquilibriu: Topological Protection and NonEquilibrium States in Strongly Correlated Electron Systems

Cite this

Microscopic Origin of Electron Accumulation in In₂O₃