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Micro-nano fabrication of self-aligned silicon electron field emitter arrays using pulsed KrF laser irradiation

  • Mohammed Zubair Mohammed Shamim*
  • , Saydulla Persheyev
  • , Monji Zaidi
  • , Mohammed Usman
  • , Mohammad Shiblee
  • , Syed Jaffar Ali
  • , Mohammad Rizwanur Rahman
  • *Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Self-aligned silicon micro-nano structured electron field emitter arrays were fabricated using pulsed krypton fluoride (KrF) excimer laser crystallization (ELC) of hydrogenated amorphous thin silicon films (a-Si:H) on metal coated backplane samples. We investigate the effect of laser processing parameters on the growth of micro-nano conical structures on the surface of the thin silicon films. Randomly oriented conical structures as high as 1 µm were fabricated using laser pulse frequency of 100 Hz and sample stage scanning speed of 0.25 mm/sec. Best field emission (FE) results were measured from samples with the highest surface features with FE currents in the order of 10−6 A and low turn-on emission threshold of ∼14 V/µm. Light emission from the prototype demonstrators was tested using bespoke driver electronics and planar anodes coated with indium tin-oxide (ITO) and medium voltage FE phosphors, to exemplify their usage for future flat panel display technologies.

Original languageEnglish
Pages (from-to)47-57
Number of pages11
JournalIntegrated Ferroelectrics
Volume204
Issue number1
Early online date24 Jan 2020
DOIs
Publication statusPublished - 2020
EventInternational Conference on Nano-Structured Materials & Devices - ICNSMD 2018 - New Delhi, India
Duration: 1 Oct 2018 → 5 Oct 2018

Keywords

  • Electron field emission display
  • Excimer laser crystallization
  • Hydrogenated amorphous silicon

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