Abstract
Self-aligned silicon micro-nano structured electron field emitter arrays were fabricated using pulsed krypton fluoride (KrF) excimer laser crystallization (ELC) of hydrogenated amorphous thin silicon films (a-Si:H) on metal coated backplane samples. We investigate the effect of laser processing parameters on the growth of micro-nano conical structures on the surface of the thin silicon films. Randomly oriented conical structures as high as 1 µm were fabricated using laser pulse frequency of 100 Hz and sample stage scanning speed of 0.25 mm/sec. Best field emission (FE) results were measured from samples with the highest surface features with FE currents in the order of 10−6 A and low turn-on emission threshold of ∼14 V/µm. Light emission from the prototype demonstrators was tested using bespoke driver electronics and planar anodes coated with indium tin-oxide (ITO) and medium voltage FE phosphors, to exemplify their usage for future flat panel display technologies.
| Original language | English |
|---|---|
| Pages (from-to) | 47-57 |
| Number of pages | 11 |
| Journal | Integrated Ferroelectrics |
| Volume | 204 |
| Issue number | 1 |
| Early online date | 24 Jan 2020 |
| DOIs | |
| Publication status | Published - 2020 |
| Event | International Conference on Nano-Structured Materials & Devices - ICNSMD 2018 - New Delhi, India Duration: 1 Oct 2018 → 5 Oct 2018 |
Keywords
- Electron field emission display
- Excimer laser crystallization
- Hydrogenated amorphous silicon
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