TY - JOUR
T1 - Micro-nano fabrication of self-aligned silicon electron field emitter arrays using pulsed KrF laser irradiation
AU - Shamim, Mohammed Zubair Mohammed
AU - Persheyev, Saydulla
AU - Zaidi, Monji
AU - Usman, Mohammed
AU - Shiblee, Mohammad
AU - Ali, Syed Jaffar
AU - Rahman, Mohammad Rizwanur
N1 - The authors gratefully acknowledge the support by the College of Engineering Research Center under the Deanship of Scientific Research of King Khalid University, Saudi Arabia. (Grant No. 98)
PY - 2020
Y1 - 2020
N2 - Self-aligned silicon micro-nano structured electron field emitter arrays were fabricated using pulsed krypton fluoride (KrF) excimer laser crystallization (ELC) of hydrogenated amorphous thin silicon films (a-Si:H) on metal coated backplane samples. We investigate the effect of laser processing parameters on the growth of micro-nano conical structures on the surface of the thin silicon films. Randomly oriented conical structures as high as 1 µm were fabricated using laser pulse frequency of 100 Hz and sample stage scanning speed of 0.25 mm/sec. Best field emission (FE) results were measured from samples with the highest surface features with FE currents in the order of 10−6 A and low turn-on emission threshold of ∼14 V/µm. Light emission from the prototype demonstrators was tested using bespoke driver electronics and planar anodes coated with indium tin-oxide (ITO) and medium voltage FE phosphors, to exemplify their usage for future flat panel display technologies.
AB - Self-aligned silicon micro-nano structured electron field emitter arrays were fabricated using pulsed krypton fluoride (KrF) excimer laser crystallization (ELC) of hydrogenated amorphous thin silicon films (a-Si:H) on metal coated backplane samples. We investigate the effect of laser processing parameters on the growth of micro-nano conical structures on the surface of the thin silicon films. Randomly oriented conical structures as high as 1 µm were fabricated using laser pulse frequency of 100 Hz and sample stage scanning speed of 0.25 mm/sec. Best field emission (FE) results were measured from samples with the highest surface features with FE currents in the order of 10−6 A and low turn-on emission threshold of ∼14 V/µm. Light emission from the prototype demonstrators was tested using bespoke driver electronics and planar anodes coated with indium tin-oxide (ITO) and medium voltage FE phosphors, to exemplify their usage for future flat panel display technologies.
KW - Electron field emission display
KW - Excimer laser crystallization
KW - Hydrogenated amorphous silicon
U2 - 10.1080/10584587.2019.1674988
DO - 10.1080/10584587.2019.1674988
M3 - Article
AN - SCOPUS:85079067040
SN - 1058-4587
VL - 204
SP - 47
EP - 57
JO - Integrated Ferroelectrics
JF - Integrated Ferroelectrics
IS - 1
T2 - International Conference on Nano-Structured Materials & Devices - ICNSMD 2018
Y2 - 1 October 2018 through 5 October 2018
ER -