Memristive operation mode of a site-controlled quantum dot floating gate transistor

P. Maier; F. Hartmann; T. Mauder; M. Emmerling; C. Schneider; M. Kamp; S. Höfling; L. Worschech

doi:10.1063/1.4921061

Memristive operation mode of a site-controlled quantum dot floating gate transistor

P. Maier, F. Hartmann, T. Mauder, M. Emmerling, C. Schneider, M. Kamp, S. Höfling, L. Worschech

Research output: Contribution to journal › Article › peer-review

Abstract

We have realized a floating gate transistor based on a GaAs/AlGaAs heterostructure with site-controlled InAs quantum dots. By short-circuiting the source contact with the lateral gates and performing closed voltage sweep cycles, we observe a memristive operation mode with pinched hysteresis loops and two clearly distinguishable conductive states. The conductance depends on the quantum dot charge which can be altered in a controllable manner by the voltage value and time interval spent in the charging region. The quantum dot memristor has the potential to realize artificial synapses in a state-of-the-art opto-electronic semiconductor platform by charge localization and Coulomb coupling.

Original language	English
Article number	203501
Journal	Applied Physics Letters
Volume	106
Issue number	20
DOIs	https://doi.org/10.1063/1.4921061
Publication status	Published - 18 May 2015

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10.1063/1.4921061

Hofling_2015_APL_Memristive
Copyright 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in: Maier, P., Hartmann, F., Mauder, T., Emmerling, M., Schneider, C., Kamp, M., Höfling, S., & Worschech, L. (2015). Memristive operation mode of a site-controlled quantum dot floating gate transistor. Applied Physics Letters, 106(20), [203501], and may be found at http://dx.doi.org/10.1063/1.4921061.
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title = "Memristive operation mode of a site-controlled quantum dot floating gate transistor",

abstract = "We have realized a floating gate transistor based on a GaAs/AlGaAs heterostructure with site-controlled InAs quantum dots. By short-circuiting the source contact with the lateral gates and performing closed voltage sweep cycles, we observe a memristive operation mode with pinched hysteresis loops and two clearly distinguishable conductive states. The conductance depends on the quantum dot charge which can be altered in a controllable manner by the voltage value and time interval spent in the charging region. The quantum dot memristor has the potential to realize artificial synapses in a state-of-the-art opto-electronic semiconductor platform by charge localization and Coulomb coupling.",

author = "P. Maier and F. Hartmann and T. Mauder and M. Emmerling and C. Schneider and M. Kamp and S. H{\"o}fling and L. Worschech",

note = "The authors gratefully acknowledge financial support from the European Union (FPVII (2007-2013) under Grant Agreement No. 318287 Landauer) as well as the state of Bavaria. ",

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T1 - Memristive operation mode of a site-controlled quantum dot floating gate transistor

AU - Maier, P.

AU - Hartmann, F.

AU - Mauder, T.

AU - Emmerling, M.

AU - Schneider, C.

AU - Kamp, M.

AU - Höfling, S.

AU - Worschech, L.

N1 - The authors gratefully acknowledge financial support from the European Union (FPVII (2007-2013) under Grant Agreement No. 318287 Landauer) as well as the state of Bavaria.

PY - 2015/5/18

Y1 - 2015/5/18

N2 - We have realized a floating gate transistor based on a GaAs/AlGaAs heterostructure with site-controlled InAs quantum dots. By short-circuiting the source contact with the lateral gates and performing closed voltage sweep cycles, we observe a memristive operation mode with pinched hysteresis loops and two clearly distinguishable conductive states. The conductance depends on the quantum dot charge which can be altered in a controllable manner by the voltage value and time interval spent in the charging region. The quantum dot memristor has the potential to realize artificial synapses in a state-of-the-art opto-electronic semiconductor platform by charge localization and Coulomb coupling.

AB - We have realized a floating gate transistor based on a GaAs/AlGaAs heterostructure with site-controlled InAs quantum dots. By short-circuiting the source contact with the lateral gates and performing closed voltage sweep cycles, we observe a memristive operation mode with pinched hysteresis loops and two clearly distinguishable conductive states. The conductance depends on the quantum dot charge which can be altered in a controllable manner by the voltage value and time interval spent in the charging region. The quantum dot memristor has the potential to realize artificial synapses in a state-of-the-art opto-electronic semiconductor platform by charge localization and Coulomb coupling.

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DO - 10.1063/1.4921061

M3 - Article

AN - SCOPUS:84929630004

SN - 0003-6951

VL - 106

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

M1 - 203501

ER -

Memristive operation mode of a site-controlled quantum dot floating gate transistor

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