Memristive operation mode of a site-controlled quantum dot floating gate transistor

P. Maier, F. Hartmann, T. Mauder, M. Emmerling, C. Schneider, M. Kamp, S. Höfling, L. Worschech

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)
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We have realized a floating gate transistor based on a GaAs/AlGaAs heterostructure with site-controlled InAs quantum dots. By short-circuiting the source contact with the lateral gates and performing closed voltage sweep cycles, we observe a memristive operation mode with pinched hysteresis loops and two clearly distinguishable conductive states. The conductance depends on the quantum dot charge which can be altered in a controllable manner by the voltage value and time interval spent in the charging region. The quantum dot memristor has the potential to realize artificial synapses in a state-of-the-art opto-electronic semiconductor platform by charge localization and Coulomb coupling.
Original languageEnglish
Article number203501
JournalApplied Physics Letters
Issue number20
Publication statusPublished - 18 May 2015


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